Transport properties of Bi2-xInxSe3 single crystals

Journal of Solid State Chemistry

Volumn 160, Issue 2, 2001, Pages 474-481

  Navratil J ^a   Plechacek T ^a   Horak J ^a   Karamazov, S ^a   Lost'ak P ^a   Dyck, J S ^b   Chen, W ^b   Uher, C ^b  

^a UNIVERSITY OF PARDUBICE   (Czech Republic)

^b UNIVERSITY OF MICHIGAN   (United States)

Author keywords

Bi2Se3; Carrier scattering; Indium incorporation; Narrow gap semiconductors; Reflectance; Tetradymite structure; Transport properties

Indexed keywords

BISMUTH DERIVATIVE; INDIUM; SELENIUM DERIVATIVE;

ARTICLE; CHEMICAL BINDING; CRYSTAL STRUCTURE; ELECTRIC CONDUCTIVITY; MOLECULAR DYNAMICS; SEMICONDUCTOR; STRUCTURE ANALYSIS; TEMPERATURE DEPENDENCE; THERMAL ANALYSIS; THERMAL CONDUCTIVITY; TRANSPORT KINETICS;

EID: 0034788705     PISSN: 00224596     EISSN: None     Source Type: Journal    
DOI: 10.1006/jssc.2001.9323     Document Type: Article

References (14)