Low temperature thermoelectric properties of Bi 2-xSb xTeSe 2 crystals near the n-p crossover

Solid State Communications

Volumn 152, Issue 14, 2012, Pages 1208-1211

  Fuccillo, M K ^a   Charles, M E ^a   Hor, Y S ^a,b   Jia, Shuang ^a   Cava, R J ^a  

^a PRINCETON UNIVERSITY   (United States)

^b MISSOURI UNIVERSITY OF SCIENCE AND TECHNOLOGY   (United States)

Author keywords

A. Semiconductors; B. Doping; D. Electronic transport; D. Thermoelectric

Indexed keywords

BASAL PLANES; D. THERMOELECTRIC; ELECTRICAL RESISTANCES; ELECTRICAL RESISTIVITY; ELECTRON HOLE; ELECTRONIC TRANSPORT; FIGURE OF MERITS; HALL MEASUREMENTS; LOW TEMPERATURES; NANO-STRUCTURING; P-TYPE; THERMOELECTRIC PROPERTIES;

SEMICONDUCTOR DOPING;

THERMAL CONDUCTIVITY;

EID: 84861749329     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ssc.2012.04.062     Document Type: Article

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