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Volumn 112, Issue 11, 2012, Pages

Inertness and degradation of (0001) surface of Bi2Se3 topological insulator

(12) Golyashov, V A a Kokh, K A b Makarenko, S V c Romanyuk, K N a,c Prosvirin, I P d Kalinkin, A V d Tereshchenko, O E a,c Kozhukhov, A S c Sheglov, D V c Eremeev, S V e,f Borisova, S D e,f Chulkov, E V g,h

a NOVOSIBIRSK STATE UNIVERSITY (Russian Federation)

b SOBOLEV INSTITUTE OF GEOLOGY AND MINERALOGY (Russian Federation)

c INSTITUTE OF SEMICONDUCTOR PHYSICS (Russian Federation)

d BORESKOV INSTITUTE OF CATALYSIS (Russian Federation)

e INSTITUTE OF STRENGTH PHYSICS AND MATERIALS SCIENCE (Russian Federation)

f TOMSK STATE UNIVERSITY (Russian Federation)

g DONOSTIA INTERNATIONAL PHYSICS CENTER DIPC (Spain)

h UNIVERSITY OF THE BASQUE COUNTRY UPV EHU (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

AB INITIO; AIR EXPOSURE; DFT CALCULATION; MODIFIED BRIDGMAN METHOD; MOLECULAR ADSORPTION; TOPOLOGICAL INSULATORS;

ADSORPTION; CALCULATIONS; CRYSTAL GROWTH FROM MELT; DENSITY FUNCTIONAL THEORY; MOLECULAR OXYGEN; PHOTOELECTRONS; SCANNING TUNNELING MICROSCOPY; SELENIUM; SURFACE DEFECTS; X RAY PHOTOELECTRON SPECTROSCOPY;

BISMUTH;

EID: 84871191710 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.4767458 Document Type: Article

Times cited : (62)

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