Comparative study of field-dependent carrier dynamics and emission kinetics of InGaN/GaN light-emitting diodes grown on (11 2 ̄ 2) semipolar versus (0001) polar planes

Applied Physics Letters

Volumn 104, Issue 14, 2014, Pages

  Ji, Yun ^a   Liu, Wei ^a   Erdem, Talha ^b   Chen, Rui ^a   Tiam Tan, Swee ^a   Zhang, Zi Hui ^a   Ju, Zhengang ^a   Zhang, Xueliang ^a   Sun, Handong ^a   Sun, Xiao Wei ^a   Zhao, Yuji ^c   Denbaars, Steven P ^c   Nakamura, Shuji ^c   Volkan Demir, Hilmi ^a,b  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b BILKENT UNIVERSITY   (Turkey)

^c University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC FIELDS; ELECTROLUMINESCENCE; POLARIZATION; SEMICONDUCTOR QUANTUM WELLS;

CARRIER DYNAMICS; COMPARATIVE STUDIES; GAN LIGHT-EMITTING DIODES; INTERNAL ELECTRIC FIELDS; PHOTOLUMINESCENCE EMISSION; RADIATIVE RECOMBINATION RATE; STABLE EMISSIONS; TIME-RESOLVED PL SPECTRA;

LIGHT EMITTING DIODES;

EID: 84898942899     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4870840     Document Type: Article

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