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Thin Solid Films

Volumn 558, Issue , 2014, Pages 378-384

Annealing effects on zinc oxide-silica films prepared by sol-gel technique for chemical sensing applications

(4) Ali, Atif Mossad a,b Ismail, Adel A c,d Najmy, Rasha a Al Hajry, Ali c

a KING KHALID UNIVERSITY (Saudi Arabia)

b Assiut University (Egypt)

c NAJRAN UNIVERSITY (Saudi Arabia)

d CENTRAL METALLURGICAL RESEARCH AND DEVELOPMENT INSTITUTE CMRDI (Egypt)

Author keywords

Chemical sensors; Composite; Optical band gap; Photoluminescence; Silicon dioxide; Sol gel deposition; Structural properties; Zinc oxide

Indexed keywords

CHEMICAL SENSORS; COMPOSITE MATERIALS; OPTICAL BAND GAPS; PHOTOLUMINESCENCE; REACTION KINETICS; SILICA; SOL-GEL PROCESS; SOL-GELS; STRUCTURAL PROPERTIES; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS; ZINC OXIDE;

C-AXIS ORIENTATIONS; CHEMICAL SENSING APPLICATIONS; DETECTION AND QUANTIFICATIONS; EFFECT OF ANNEALING; LINEAR DYNAMIC RANGES; LOWER LIMIT OF DETECTIONS; PHOTOLUMINESCENCE PROPERTIES; SOL-GEL DEPOSITION;

FILM PREPARATION;

EID: 84898809988 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/j.tsf.2014.02.058 Document Type: Article

Times cited : (11)

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