Characterization of mesoporous ZnO:SiO2 films obtained by the sol-gel method

Thin Solid Films

Volumn 518, Issue 23, 2010, Pages 7002-7006

  Martins, R M S ^a,b   Musat, V ^c   Mucklich A ^d   Franco, N ^a,b   Fortunato, E ^e  

^a INSTITUTO TECNOLÓGICO E NUCLEAR   (Portugal)

^b CENTRO DE FÍSICA NUCLEAR DA UNIVERSIDADE DE LISBOA   (Portugal)

^c DUNAREA DE JOS UNIVERSITY OF GALATI   (Romania)

^d INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

^e DEPARTAMENTO DE CIÊNCIA DOS MATERIAIS   (Portugal)

Author keywords

Atomic force microscopy; Mesoporous films; Nanoparticles; Optical and electrical properties; Silica matrix; Sol gel; Thin films; X ray diffraction; Zinc oxide

Indexed keywords

CRACK FREE; ELECTRONIC APPLICATION; GAS-SENSING MATERIALS; LOW-TEMPERATURE CRYSTALLIZATION; MESOPOROUS; MESOPOROUS FILMS; MICROPOROUS SILICA; OPTICAL AND ELECTRICAL PROPERTIES; OPTICAL TRANSMITTANCE; PREFERRED ORIENTATIONS; SILICA MATRIX; SOL-GEL METHODS; SPECIAL APPLICATIONS; VISIBLE AND NEAR INFRARED; ZINC OXIDE NANOPARTICLES; ZNO NANOPARTICLES; ZNO PARTICLES; ZNO:SIO;

ATOMIC FORCE MICROSCOPY; ATOMS; DIFFRACTION; ELECTRIC PROPERTIES; GELS; MORPHOLOGY; NANOCOMPOSITES; NANOPARTICLES; OPTICAL PROPERTIES; OXIDE FILMS; SILICA; SOL-GEL PROCESS; SOL-GELS; SOLS; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS; X RAYS; ZINC; ZINC OXIDE;

OPTICAL FILMS;

EID: 77956227929     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2010.06.015     Document Type: Article

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