Effects of y contents on surface, structural, optical, and electrical properties for Y-doped ZnO thin films

Thin Solid Films

Volumn 558, Issue , 2014, Pages 27-30

  Heo, Sungeun ^a   Sharma, Sanjeev K ^a   Lee, Sejoon ^a   Lee, Youngmin ^a   Kim, Changmin ^a   Lee, Byungho ^a   Lee, Hwangho ^a   Kim, Deuk Young ^a  

^a Dongguk University   (South Korea)

Author keywords

Electrical properties; Photoluminescence; Sol gel deposition; Structural properties; Thin films; Yttrium doped zinc oxide

Indexed keywords

DEPOSITION; DOPING (ADDITIVES); PHOTOLUMINESCENCE; POINT DEFECTS; SOL-GELS; STRUCTURAL PROPERTIES; THIN FILMS; ZINC OXIDE;

HALL RESISTIVITY; NATIVE POINT DEFECTS; SOL-GEL DEPOSITION; SOL-GEL SYNTHESIS; Y DOPANTS; Y-DOPED; YTTRIUM-DOPED; ZNO THIN FILM;

ELECTRIC PROPERTIES;

EID: 84898802529     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2014.02.025     Document Type: Article

References (47)

1. X. Fang, J. Li, D. Zhao, D. Shen, B. Li, and X. Wang J. Phys. Chem. C 113 2009 21208
2. M. Willander, M.Q. Israr, J.R. Sadaf, and O. Nur Nanophotonics 1 2012 99
3. Y.-S. Kim, and W.-P. Tai Appl. Surf. Sci. 253 2007 4911
4. W. Yang, Z. Liu, D.-L. Peng, F. Zhang, H. Huang, Y. Xie, and Z. Wu Appl. Surf. Sci. 255 2009 5669
5. Y. Lee, C. Lee, E. Shim, E. Jung, J. Lee, D.Y. Kim, S. Lee, D. Fu, and H.D. Yoon J. Korean Phys. Soc. 59 2011 2774
6. Y. Lee, D.Y. Kim, and S. Lee J. Korean Phys. Soc. 60 2012 99
7. M. Joseph, H. Tabata, and T. Kawai Appl. Phys. Lett. 74 1999 2534
8. Dhananjay, J. Nagaraju, and S.B. Krupanidhi J. Appl. Phys. 101 2007 104104
9. M.D. Glinchuk, E.V. Kirichenko, V.A. Stephanovich, and B.Y. Zaulychny J. Appl. Phys. 105 2009 104101
10. Y. Lee, D.Y. Kim, S. Lee, and D. Fu J. Korean Phys. Soc. 60 2012 1891
11. S. Lee, Y. Lee, D.Y. Kim, and T.W. Kang J. Appl. Phys. 114 2013 064102
12. S. Lee, T.W. Kang, and D.Y. Kim J. Cryst. Growth 284 2005 6
13. S. Lee, Y. Shon, S.-W. Lee, S.J. Hwang, H.S. Lee, T.W. Kang, and D.Y. Kim Appl. Phys. Lett. 88 2006 212513
14. S. Lee, D.Y. Kim, Y. Shon, and C.S. Yoon Appl. Phys. Lett. 89 2006 022120
15. S. Lee, Y. Shon, T.W. Kang, C.S. Yoon, E.K. Kim, and D.Y. Kim Appl. Phys. Lett. 93 2008 022113
16. S. Lee, Y. Shon, D.Y. Kim, T.W. Kang, and C.S. Yoon Appl. Phys. Lett. 96 2010 042115
17. S. Lee, Y. Lee, Y. Shon, D.Y. Kim, and T.W. Kang Appl. Phys. Lett. 97 2010 182103
18. C.O. Kim, S. Kim, H.T. Oh, S.-H. Choi, Y. Shon, S. Lee, H.N. Hwang, and C.-C. Hwang Physica B 405 2010 4678
19. F. Bertram, S. Giemsch, D. Forster, J. Christen, R. Kling, C. Kirchner, and A. Waag Appl. Phys. Lett. 88 2006 061915
20. M.K. Yadav, M. Ghosh, R. Biswas, A.K. Raychaudhuri, A. Mookerjee, and S. Datta Phys. Rev. B 76 2007 195450
21. C.-L. Tsai, M.-S. Wang, Y.-H. Chen, H.-C. Chang, C.-J. Liu, C.-T. Lee, Y.-T. Shih, H.-J. Huang, and Y.-J. Lin J. Appl. Phys. 107 2010 113717
22. X. Han, K. Han, and M. Tao J. Electrochem. Soc. 157 2010 H593
23. P.-T. Hsieh, R.W.-K. Chuang, C.-Q. Chang, C.-M. Wang, and S.-J. Chang J. Sol-Gel Sci. Technol. 58 2011 42
24. J. Yang, R. Wang, L. Yang, J. Lang, M. Wei, M. Gao, X. Liu, J. Cao, X. Li, and N. Yang J. Alloys Compd. 509 2011 3606
25. P. Chen, W. Lai, L.-C. Peng, C. Kuo, C.-L. Yeh, J. Sheu, and C. Tun IEEE Trans. Electron Devices 57 2010 134
26. R. Kaur, A. Singh, and R. Mehra Phys. Status Solidi (a) 202 2005 1053
27. T. Jun, K. Song, Y. Jung, S. Jeong, and J. Moon J. Mater. Chem. 21 2011 13524
28. S.-S. Li, Z. Zhang, J.-Z. Hang, X.-P. Feng, and R.-X. Liu Chin. Phys. B 20 2011 127102
29. H.-C. Hsu, H.-Y. Huang, M.O. Eriksson, T.-F. Dai, and P.-O. Holtz Appl. Phys. Lett. 102 2013 013109
30. C.-T. Wu, and J.-J. Wu J. Mater. Chem. 21 2011 13605
31. L. Znaidi Mater. Sci. Eng. B 174 2010 18
32. A.B. Djurišić, X. Chen, Y.H. Leung, and A.M.C. Ng J. Mater. Chem. 22 2012 6526
33. Y. Zhang, G. Sun, H. Zhao, J. Li, and Z. Zheng Phys. Scr. 84 2011 045402
34. Q. Yu, W. Fu, C. Yu, H. Yang, R. Wei, Y. Sui, S. Liu, Z. Liu, M. Li, and G. Wang J. Phys. D. Appl. Phys. 40 2007 5592
35. B.B. He Two Dimensional X-ray Diffraction 2009 Wiley Hoboken
36. R. Heller, J. McGannon, and A. Weber J. Appl. Phys. 21 1950 1283
37. J. Chastain, and J.F. Moulder Physical Electronics Division 1992 Perkin-Elmer Corp Eden Prairie, MN
38. G. Ingo, E. Paparazzo, O. Bagnarelli, and N. Zacchetti Surf. Interface Anal. 16 1990 515
39. R. Zhang, L. Fan, Y. Fang, and S. Yang J. Mater. Chem. 18 2008 4964
40. Y. Jin, Q. Cui, G. Wen, Q. Wang, J. Hao, S. Wang, and J. Zhang J. Phys. D. Appl. Phys. 42 2009 215007
41. J. Lang, Q. Han, J. Yang, C. Li, X. Li, L. Yang, Y. Zhang, M. Gao, D. Wang, and J. Cao J. Appl. Phys. 107 2010 (074302-074302-074304)
42. S.-S. Chang, C.H. Park, and S.W. Park Mater. Chem. Phys. 79 2003 9
43. X. Wei, B. Man, M. Liu, C. Xue, H. Zhuang, and C. Yang Physica B 388 2007 145
44. J. Zheng, J. Song, Q. Jiang, and J. Lian Appl. Surf. Sci. 258 2012 6735
45. B. Lin, Z. Fu, and Y. Jia Appl. Phys. Lett. 79 2001 943
46. M. Gao, J. Yang, L. Yang, Y. Zhang, J. Lang, H. Liu, H. Fan, Y. Sun, Z. Zhang, and H. Song Superlattice. Microst. 52 2012 84
47. D.K. Schroder Semiconductor Material and Device Characterization 3rd ed. 2006 Wiley New York China