Investigation into low-temperature photoluminescence internal quantum efficiency and defect-recombination in InGaN light-emitting diodes

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 11, Issue 3-4, 2014, Pages 718-721

  Ji, Xiaoli ^a   Ma, Jun ^a   Wei, Xuecheng ^a   Duan, Ruifei ^a   Wang, Junxi ^a   Yi, Xiaoyan ^a   Zeng, Yiping ^a   Wang, Guohong ^a   Yang, Fuhua ^a   Li, Jinmin ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

Defect; InGaN; Internal quantum efficiency; Light emitting diodes; Photoluminescence; Temperature

Indexed keywords

ACTIVATION ENERGY; DIODES; LIGHT EMITTING DIODES; PHOTOLUMINESCENCE; QUANTUM EFFICIENCY; TEMPERATURE; TEMPERATURE DISTRIBUTION;

EMPIRICAL FORMULAS; INGAN; INTERNAL QUANTUM EFFICIENCY; LOW TEMPERATURE PHOTOLUMINESCENCE; LOW TEMPERATURES; TEMPERATURE DEPENDENCE; TEMPERATURE DEPENDENT;

DEFECTS;

EID: 84898541551     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.201300479     Document Type: Article

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