Opto-electrical properties of Sb-doped p-type ZnO nanowires

Applied Physics Letters

Volumn 104, Issue 11, 2014, Pages

  Kao, Tzu Hsuan ^a   Chen, Jui Yuan ^a   Chiu, Chung Hua ^a   Huang, Chun Wei ^a   Wu, Wen Wei ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ORDERS OF MAGNITUDE; P TYPE ZNO; P-TYPE CHARACTERISTICS; PHOTO DETECTION; RESPONSIVITY; SB-DOPED; SI (100) SUBSTRATE; SINGLE-CRYSTALLINE;

CHEMICAL VAPOR DEPOSITION; ELECTRIC PROPERTIES; FIELD EFFECT TRANSISTORS; NANOWIRES; PHOTOELECTRONS; X RAY PHOTOELECTRON SPECTROSCOPY;

ZINC OXIDE;

EID: 84897886370     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4869355     Document Type: Article

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37. See supplementary material at http://dx.doi.org/10.1063/1.4869355 E-APPLAB-104-066412 for the compare of growth parameters and the schematic diagram of electrical sample fabrication process.