Non-catalytic growth of high-aspect-ratio Sb-doped ZnO nanowires by simple thermal evaporation process: Structural and optical properties

Journal of Alloys and Compounds

Volumn 479, Issue 1-2, 2009, Pages 290-293

  Kim, S H ^a   Umar, Ahmad ^a,b   Park, Y K ^a   Kim, J H ^a   Lee, E W ^a   Hahn, Y B ^a  

^a Nanomaterials Processing Research Center   (South Korea)

^b NAJRAN UNIVERSITY   (Saudi Arabia)

Author keywords

Nanostructures; Scanning and transmission electron microscopy; Semiconductor

Indexed keywords

AS-GROWN; BROAD BANDS; CATALYTIC GROWTHS; DOPED-ZNO; FIELD EMISSIVE DISPLAY TECHNOLOGIES; GREEN EMISSIONS; HEXAGONAL PHASE; HIGH ASPECT RATIOS; HIGH-RESOLUTION TEM; ROOM-TEMPERATURE PHOTOLUMINESCENCES; SB-DOPED; SCANNING AND TRANSMISSION ELECTRON MICROSCOPY; SEMICONDUCTOR; SI(1 0 0 ); STRUCTURAL AND OPTICAL PROPERTIES; STRUCTURAL CHARACTERIZATIONS; STRUCTURAL DEFECTS; TYPICAL APPLICATIONS; UV EMISSIONS; VISIBLE REGIONS; WURTZITE; ZNO; ZNO NANOWIRES;

ANTIMONY; ASPECT RATIO; ATOMIC SPECTROSCOPY; ATOMS; CRYSTAL ATOMIC STRUCTURE; ELECTRIC CONDUCTIVITY; ELECTRIC WIRE; ELECTRON MICROSCOPES; EMISSION SPECTROSCOPY; NANOWIRES; OPTICAL PROPERTIES; OXYGEN; SCANNING; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR GROWTH; TRANSMISSION ELECTRON MICROSCOPY; VAPORS; ZINC; ZINC OXIDE; ZINC SULFIDE;

THERMAL EVAPORATION;

EID: 67349089031     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2008.11.106     Document Type: Article

References (18)

1. Yang P. MRS Bull. 30 (2005) 85
2. Pearton S.J., Kang B.S., Gila B.P., Norton D.P., Kryliouk O., Ren F., Heo Y.W., Chang C.Y., Chi G.C., Wang W.M., and Chen L.C. J. Nanosci. Nanotechnol. 8 (2008) 99
3. Umar A., and Hahn Y.-B. Cryst. Growth Des. 8 (2008) 2741
4. Umar A., Kim S.H., Karunagaran B., Suh E.K., and Hahn Y.B. Inorg. Chem. 47 (2008) 4088
5. Umar A., Rahman M.M., Kim S.H., and Hahn Y.B. Chem. Commun. (2008) 166-168
6. O'Regan B., and Gr.atzel M. Nature 353 (1991) 737
7. Umar A., and Hahn Y.B. Appl. Phys. Lett. 88 (2006) 173120
8. Wang Z.L. Annu. Rev. Phys. Chem. 55 (2004) 159
9. Umar A., Kim B.-K., Kim J.-J., and Hahn Y.B. Nanotechnology 18 (2007) 175606
10. Umar A., Kim S.H., Lee H., Lee N., and Hahn Y.B. J. Phys. D: Appl. Phys. 41 (2008) 65412
11. Umar A., Rahman M.M., Kim S.H., and Hahn Y.B. J. Nanosci. Nanotechnol. 8 (2008) 3216
12. Bae S.Y., Na C.W., Kang J.H., and Park J. J. Phys. Chem. B 109 (2005) 2526
13. Mandalapu L.J., Yang Z., Xiu F.X., Zhao D.T., and Liu J.L. Appl. Phys. Lett. 88 (2006) 092103
14. Guo W., Allenic A., Chen Y.B., Pan X.Q., Che Y., Hu Z.D., and Liu B. Appl. Phys. Lett. 90 (2007) 242108
15. Zang C., Zhao D., tang Y., Guo Z., Zhang J., Shen D., and Liu Y.C. Chem. Phys. Lett. 452 (2008) 148
16. Ham H., Shen G., Cho J.-H., Lee T.J., Seo S.H., and Lee C.J. Chem. Phys. Lett. 404 (2005) 69
17. Vanheusdan K., Seager C.H., Warren W.L., Tallent D.R., and Voigt J.A. Appl. Phys. Lett. 68 (1995) 403
18. Egehaaf H.J., and Oelkrug D. J. Cryst. Growth 161 (1996) 190