Improved surface passivation using dual-Layered a-Si:H for silicon heterojunction solar cells

ECS Solid State Letters

Volumn 3, Issue 3, 2014, Pages

  Lee, Kyu Sung ^a   Yeon, Chang Bong ^a,b   Yun, Sun Jin ^a,b   Jung, Kwang Hoon ^a,b   Lima, Jung Wook ^a,b  

^a Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

^b University of Science and Technology (UST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

DEVICE PERFORMANCE; EFFECTIVE LIFETIME; HIGH QUALITY SURFACE; HYDROGENATED AMORPHOUS SILICON (A-SI:H); MINORITY CARRIER LIFETIMES; QUASI-STEADY STATE; SILICON HETEROJUNCTIONS; SURFACE PASSIVATION;

HETEROJUNCTIONS; OPEN CIRCUIT VOLTAGE; PASSIVATION; SOLAR CELLS;

SILICON;

EID: 84897746222     PISSN: 21628742     EISSN: 21628750     Source Type: Journal    
DOI: 10.1149/2.001404ssl     Document Type: Article

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