Electronic states of intrinsic layers in n-i-p solar cells near amorphous to microcrystalline silicon transition studied by photoluminescence spectroscopy

Applied Physics Letters

Volumn 77, Issue 20, 2000, Pages 3185-3187

  Yue, Guozhen ^a   Han, Daxing ^a   Williamson, D L ^b   Yang, Jeffrey ^c   Lord, Kenneth ^c   Guha, Subhendu ^c  

^a University of North Carolina at Chapel Hill   (United States)

^b Department of Geology and Geological Engineering   (United States)

^c United Solar Systems Corp   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001332407     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1325391     Document Type: Article

References (11)

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