Influence of emitter bandgap on interdigitated point contact back heterojunction (a-Si:H/c-Si) solar cell performance

Solar Energy Materials and Solar Cells

Volumn 109, Issue , 2013, Pages 199-203

  Jeyakumar, R ^a   Maiti, T K ^b,d   Verma, Amit ^c  

^a NATIONAL PHYSICAL LABORATORY   (India)

^b MCMASTER UNIVERSITY   (Canada)

^c Texas AandM University Kingsville   (United States)

^d HIROSHIMA UNIVERSITY   (Japan)

Author keywords

Back heterojunction; Interdigitated back contact solar cell; Photovoltaics; Point contact solar cells; Semiconductor device modeling; Silicon heterojunction

Indexed keywords

A-SI:H; BAND ALIGNMENTS; C-SI SOLAR CELL; EFFICIENCY INCREASE; FILL FACTOR; HETEROJUNCTION WITH INTRINSIC THIN LAYERS; INTERDIGITATED BACK CONTACTS; P-TYPE; PHOTOVOLTAICS; SILICON HETEROJUNCTIONS; SILICON-BASED; SOLAR CELL PERFORMANCE; THEORETICAL INVESTIGATIONS; VALANCE BANDS;

ENERGY GAP; HETEROJUNCTIONS; OPEN CIRCUIT VOLTAGE; POINT CONTACTS; SEMICONDUCTOR DEVICE MODELS; SOLAR CELLS;

SILICON;

EID: 84870552198     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2012.10.025     Document Type: Article

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