Textured metastable VO2 (B) thin films on SrTiO3 substrates with significantly enhanced conductivity

Applied Physics Letters

Volumn 104, Issue 7, 2014, Pages

  Chen, Aiping ^a,b   Bi, Zhenxing ^b   Zhang, Wenrui ^a   Jian, Jie ^a   Jia, Quanxi ^b   Wang, Haiyan ^a  

^a Department of Electrical and Computer Engineering   (United States)

^b LOS ALAMOS NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CONDUCTIVITY; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; METAL INSULATOR BOUNDARIES; METAL INSULATOR TRANSITION; NETWORK LAYERS; PULSED LASER DEPOSITION; SEMICONDUCTOR INSULATOR BOUNDARIES; STRONTIUM TITANATES; TEXTURES; THIN FILMS; VANADIUM DIOXIDE;

ELECTRICAL CONDUCTIVITY; ENHANCED CONDUCTIVITY; LAYERED NETWORK; LAYERED STRUCTURES; ORDERS OF MAGNITUDE; OUT-OF PLANE; SRTIO3 SUBSTRATES;

TITANIUM COMPOUNDS;

EID: 84897439039     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4865898     Document Type: Article

References (31)

1. F. Beteille and J. Livage, J. Sol-Gel Sci. Technol. 13, 915 (1998). 10.1023/A:1008679408509
2. Y. Muraoka and Z. Hiroi, Appl. Phys. Lett. 80, 583 (2002). 10.1063/1.1446215
3. C. V. S. Reddy, E. H. Walker, S. A. Wicker, Q. L. Williams, and R. R. Kalluru, Curr. Appl. Phys. 9, 1195 (2009). 10.1016/j.cap.2009.01.012
4. C. Leroux, G. Nihoul, and G. Van Tendeloo, Phys. Rev. B 57, 5111 (1998). 10.1103/PhysRevB.57.5111
5. C. Z. Wu and Y. Xie, Energy Environ. Sci. 3, 1191 (2010). 10.1039/c0ee00026d
6. H. Q. Li, P. He, Y. G. Wang, E. Hosono, and H. S. Zhou, J. Mater. Chem. 21, 10999 (2011). 10.1039/c1jm11523e
7. C. Batista, R. M. Ribeiro, J. Carneiro, and V. Teixeira, J. Nanosci. Nanotechnol. 9, 4220 (2009); 10.1166/jnn.2009.M36
8. E. Strelcov, Y. Lilach, and A. Kolmakov, Nano Lett. 9, 2322 (2009); 10.1021/nl900676n
9. M. Seo, J. Kyoung, H. Park, S. Koo, H. S. Kim, H. Bernien, B. J. Kim, J. H. Choe, Y. H. Ahn, H. T. Kim, N. Park, Q. H. Park, K. Ahn, and D. S. Kim, Nano Lett. 10, 2064 (2010). 10.1021/nl1002153
10. T. H. Yang, R. Aggarwal, A. Gupta, H. H. Zhou, R. J. Narayan, and J. Narayan, J. Appl. Phys. 107, 053514 (2010). 10.1063/1.3327241
11. D. H. Kim and H. S. Kwok, Appl. Phys. Lett. 65, 3188 (1994); 10.1063/1.112476
12. Y. J. Cui and S. Ramanathan, J. Vac. Sci. Technol. A 29, 041502 (2011). 10.1116/1.3584817
13. Y. Zhao, J. H. Lee, Y. H. Zhu, M. Nazari, C. H. Chen, H. Y. Wang, A. Bernussi, M. Holtz, and Z. Y. Fan, J. Appl. Phys. 111, 053533 (2012). 10.1063/1.3692391
14. J. Jian, A. P. Chen, W. Zhang, and H. Wang, J. Appl. Phys. 114, 244301 (2013). 10.1063/1.4851655
15. J. C. Valmalette and J. R. Gavarri, Mater. Sci. Eng. B 54, 168 (1998); 10.1016/S0921-5107(98)00148-2
16. L. Whittaker, H. S. Zhang, and S. Banerjee, J. Mater. Chem. 19, 2968 (2009); 10.1039/b823332b
17. Y. Oka, T. Yao, and N. Yamamoto, J. Mater. Chem. 1, 815 (1991); 10.1039/jm9910100815
18. S. A. Corr, M. Grossman, Y. F. Shi, K. R. Heier, G. D. Stucky, and R. Seshadri, J. Mater. Chem. 19, 4362 (2009); 10.1039/b900982e
19. M. B. Sahana, G. N. Subbanna, and S. A. Shivashankar, J. Appl. Phys. 92, 6495 (2002). 10.1063/1.1518148
20. H. M. Liu, Y. G. Wang, K. X. Wang, E. Hosono, and H. S. Zhou, J. Mater. Chem. 19, 2835 (2009). 10.1039/b821799h
21. S. B. Ni, H. B. Zeng, and X. L. Yang, J. Nanomater. 2011, 961389; 10.1155/2011/961389
22. C. Nethravathi, C. R. Rajamathi, M. Rajamathi, U. K. Gautam, X. Wang, D. Golberg, and Y. Bando, ACS Appl. Mater. Interface 5, 2708 (2013); 10.1021/am400202v
23. N. Li, W. X. Huang, Q. W. Shi, Y. B. Zhang, and L. W. Song, Ceram. Int. 39, 6199 (2013); 10.1016/j.ceramint.2013.01.039
24. J. J. Huang, X. F. Wang, J. F. Liu, X. M. Sun, L. Wang, and X. M. He, Int. J. Electrochem. Sci. 6, 1709 (2011);
25. G. Armstrong, J. Canales, A. R. Armstrong, and P. G. Bruce, J. Power Sources 178, 723 (2008). 10.1016/j.jpowsour.2007.11.028
26. M. M. Rahman, J. Z. Wang, N. H. Idris, Z. X. Chen, and H. K. Liu, Electrochim. Acta 56, 693 (2010); 10.1016/j.electacta.2010.10.012
27. X. H. Rui, D. H. Sim, C. Xu, W. L. Liu, H. T. Tan, K. M. Wong, H. H. Hng, T. M. Lim, and Q. Y. Yan, RCS Adv. 2, 1174 (2012). 10.1039/C1RA00698C
28. X. Wang, Y. Fei, Y. Xiong, Y. Nie, K. Feng, and L. Li, Chin. Phys. 11, 737 (2002); 10.1088/1009-1963/11/7/317
29. Y. J. Cui, X. Wang, Y. Zhou, R. Gordon, and S. Ramanathan, J. Cryst. Growth 338, 96 (2012). 10.1016/j.jcrysgro.2011.10.025
30. V. F. Silva, V. Bouquet, S. Deputier, S. Boursicot, S. Ollivier, I. T. Weber, V. L. Silva, I. M. G. Santos, M. Guilloux-Viry, and A. Perrin, J. Appl. Crystallogr. 43, 1502 (2010); 10.1107/S0021889810041221
31. A. Lotnyk, S. Senz, and D. Hesse, Thin Solid Films 515, 3439 (2007). 10.1016/j.tsf.2006.10.106