Characteristics of Ga-Sb-Te films for phase-change memory

IEEE Transactions on Magnetics

Volumn 43, Issue 2, 2007, Pages 927-929

  Cheng, Huai Yu ^a   Kao, Kin Fu ^a   Lee, Chain Ming ^b   Chin, Tsung Shune ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^b INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

Author keywords

Crystallization temperature; Electrical resistivity; Ga Sb Te; Phase change memory; Reset current

Indexed keywords

AMORPHOUS MATERIALS; CRYSTALLIZATION; ELECTRIC CURRENTS; ELECTRIC RESISTANCE; METALLIC FILMS;

CRYSTALLIZATION TEMPERATURE; MELTING TEMPERATURES; PHASE-CHANGE MEMORY (PCM); RESET CURRENTS;

GALLIUM ALLOYS;

EID: 33846615531     PISSN: 00189464     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMAG.2006.888516     Document Type: Article

References (10)

1. S. Lai and T. Lowrey, "OUM - A 180 nm nonvolatile memory cell element technology for stand alone andembedded applications," IEDM Tech. Dig., pp. 803-806, 2001.
2. Y. H. Ha, J. H. Yi, H. Horii, J. H. Park, S. H. Joo, S. O. Park, U.-I. Chung, and J. T. Moon, "An edge contact type cell for phase change RAM featuring very low power consumption," in VLSI Symp. Tech. Dig., 2003.
3. A. Pirovano, A. L. Lacaaita, A. Benvenuti, F. Pellizzer, S. Hudgens, and R. Bez, "Scaling analysis of phase-change memory technology," IEDM Tech. Dig., 2003, 29.6.1.
4. M. Wuttig, "Towards a universal memory," Nature Mater., vol. 4, no. 265, 2005.
5. M. H. R. Lankhorst, B. W. S. M. M. Ketelaars, and R. A. M. Wolters, "Low-cost and nanoscale non-volatile memory concept for future silicon chips," Nature Mater., vol. 4, p. 347, 2005.
6. M. H. R. Lankhorst, L. van Pieterson, M. van Schijndel, B. A. J. Jacobs, and J. C. N. Rijpers, "Prospects of doped Sb-Te phase-change materials for high-speed recording," Jpn. J. Appl. Phys., vol. 42, no. 863, 2003.
7. x Te films," Proc. EPCOS, 2005.
8. L. van Pieterson, M. H. R. Lankhorst, M. van Schiijndel, A. E. T. Kuiper, and J. H. J. Roosen, "Phase-change recording materials with a growth-dominated crystallization mechanism: A materials overview," J. Appl. Phys., vol. 97, p. 083520, 2005.
9. C. M. Lee, W. S. Yen, J. P. Chen, and T. S. Chin, "Performances of phase-change recording disks based on GaSbTe media," IEEE Trans. Magn., vol. 41, p. 1022, 2005.
10. C. M. Lee, Y. I. Lin, and T. S. Chin, "Crystallization kinetics of amorphous Ga-Sb-Te chalcogenide films: Part 1. Nonisothermal studies by differential scanning calorimetry," J. Mater. Res., vol. 19, p. 2929, 2004.