Stoichiometry control in quantum dots: A viable analog to impurity doping of bulk materials

ACS Nano

Volumn 7, Issue 3, 2013, Pages 1845-1849

  Luther, Joseph M ^a   Pietryga, Jeffrey M ^b  

^a NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

^b LOS ALAMOS NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CONDUCTIVE PROPERTIES; ELECTRONIC DEVICE; MATERIAL PROPERTY; OPTOELECTRONIC PROPERTIES; P-TYPE BEHAVIORS; RECONSTRUCTED SURFACES; STOICHIOMETRY CONTROL; THERMAL EVAPORATION TECHNIQUE;

MATERIALS PROPERTIES; SEMICONDUCTOR QUANTUM DOTS; THERMAL EVAPORATION;

STOICHIOMETRY;

EID: 84875668419     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn401100n     Document Type: Article

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