Controlled synthesis of transition metal dichalcogenide thin films for electronic applications

Applied Surface Science

Volumn 297, Issue , 2014, Pages 139-146

  Gatensby, Riley ^a   McEvoy, Niall ^a   Lee, Kangho ^a   Hallam, Toby ^a   Berner, Nina C ^a   Rezvani, Ehsan ^a   Winters, Sinéad ^a   O'Brien, Maria ^a   Duesberg, Georg S ^a  

^a TRINITY COLLEGE DUBLIN   (Ireland)

Author keywords

2D materials; Nanoelectronics; Sensors; Spectroscopy; Thin films; Transition metal dichalcogenides

Indexed keywords

COST EFFECTIVENESS; ELECTRON DEVICES; ENERGY GAP; INDIUM SULFIDE; LAYERED SEMICONDUCTORS; MANUFACTURE; MOLYBDENUM COMPOUNDS; NANOELECTRONICS; SCALABILITY; SELENIUM COMPOUNDS; SENSORS; SPECTROSCOPY; SULFUR COMPOUNDS; THERMOELECTRIC EQUIPMENT; TRANSITION METALS; TUNGSTEN COMPOUNDS; X RAY PHOTOELECTRON SPECTROSCOPY;

CONTROLLED SYNTHESIS; ELECTRONIC APPLICATION; ELECTRONIC DEVICE; ELECTRONIC DEVICE STRUCTURES; FUTURE APPLICATIONS; MICRO PROCESSING; SCALABLE METHODS; TRANSITION METAL DICHALCOGENIDES;

THIN FILMS;

EID: 84894618899     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2014.01.103     Document Type: Article

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