Understanding metal oxide RRAM current overshoot and reliability using Kinetic Monte Carlo simulation

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2012, Pages

  Yu, Shimeng ^a   Guan, Ximeng ^a   Wong, H S Philip ^a  

^a Stanford University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CONDUCTION MECHANISM; CURRENT OVERSHOOT; KINETIC MONTE CARLO; KINETIC MONTE CARLO SIMULATION; NUMERICAL SIMULATORS; PARASITIC CAPACITANCE; RESISTIVE RANDOM ACCESS MEMORY (RRAM); TEMPERATURE RANGE;

ELECTRON DEVICES; MONTE CARLO METHODS; OXYGEN;

METALLIC COMPOUNDS;

EID: 84876112500     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2012.6479105     Document Type: Conference Paper

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