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Volumn 47, Issue 2, 2014, Pages 364-372

Prediction of electron energies in metal oxides

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EID: 84894262815     PISSN: 00014842     EISSN: 15204898     Source Type: Journal    
DOI: 10.1021/ar400115x     Document Type: Article
Times cited : (105)

References (82)
  • 2
    • 0035891138 scopus 로고    scopus 로고
    • Photoelectrochemical cells
    • DOI 10.1038/35104607
    • Grätzel, M. Photoelectrochemical cells Nature 2001, 414, 338-344 (Pubitemid 33097816)
    • (2001) Nature , vol.414 , Issue.6861 , pp. 338-344
    • Gratzel, M.1
  • 3
    • 0038010936 scopus 로고    scopus 로고
    • Perspectives for dye-sensitized nanocrystalline solar cells
    • Grätzel, M. Perspectives for dye-sensitized nanocrystalline solar cells Prog. Photovoltaics 2000, 8, 171
    • (2000) Prog. Photovoltaics , vol.8 , pp. 171
    • Grätzel, M.1
  • 4
    • 0343626600 scopus 로고
    • A new electroaffinity scale; Together with data on valence states and on valence ionization potentials and electron affinities
    • Mulliken, R. S. A new electroaffinity scale; together with data on valence states and on valence ionization potentials and electron affinities J. Chem. Phys. 1934, 2, 782-793
    • (1934) J. Chem. Phys. , vol.2 , pp. 782-793
    • Mulliken, R.S.1
  • 5
    • 33845279880 scopus 로고
    • Absolute electronegativity and hardness: Application to inorganic chemistry
    • Pearson, R. G. Absolute electronegativity and hardness: Application to inorganic chemistry Inorg. Chem. 1988, 27, 734-740
    • (1988) Inorg. Chem. , vol.27 , pp. 734-740
    • Pearson, R.G.1
  • 6
    • 0347291894 scopus 로고
    • Absolute hardness: Companion parameter to absolute electronegativity
    • Parr, R. G.; Pearson, R. G. Absolute hardness: Companion parameter to absolute electronegativity J. Am. Chem. Soc. 1983, 105, 7512-7516
    • (1983) J. Am. Chem. Soc. , vol.105 , pp. 7512-7516
    • Parr, R.G.1    Pearson, R.G.2
  • 8
    • 84867452048 scopus 로고    scopus 로고
    • Band bending in semiconductors: Chemical and physical consequences at surfaces and interfaces
    • Zhang, Z.; Yates, J. T. Band bending in semiconductors: Chemical and physical consequences at surfaces and interfaces Chem. Rev. 2012, 112, 5520-5551
    • (2012) Chem. Rev. , vol.112 , pp. 5520-5551
    • Zhang, Z.1    Yates, J.T.2
  • 11
    • 0000236454 scopus 로고
    • Surface electronic structure: Embedded self-consistent calculations
    • Inglesfield, J. E.; Benesh, G. A. Surface electronic structure: Embedded self-consistent calculations Phys. Rev. B 1988, 37, 6682-6700
    • (1988) Phys. Rev. B , vol.37 , pp. 6682-6700
    • Inglesfield, J.E.1    Benesh, G.A.2
  • 12
    • 84865527536 scopus 로고    scopus 로고
    • Importance of the correct Fermi energy on the calculation of defect formation energies in semiconductors
    • 082105
    • West, D.; Sun, Y. Y.; Zhang, S. B. Importance of the correct Fermi energy on the calculation of defect formation energies in semiconductors Appl. Phys. Lett. 2012, 101 082105
    • (2012) Appl. Phys. Lett. , vol.101
    • West, D.1    Sun, Y.Y.2    Zhang, S.B.3
  • 13
    • 80052552663 scopus 로고    scopus 로고
    • First principles scheme to evaluate band edge positions in potential transition metal oxide photocatalysts and photoelectrodes
    • Toroker, M. C.; Kanan, D. K.; Alidoust, N.; Isseroff, L. Y.; Liao, P.; Carter, E. A. First principles scheme to evaluate band edge positions in potential transition metal oxide photocatalysts and photoelectrodes Phys. Chem. Chem. Phys. 2011, 13, 16644-16654
    • (2011) Phys. Chem. Chem. Phys. , vol.13 , pp. 16644-16654
    • Toroker, M.C.1    Kanan, D.K.2    Alidoust, N.3    Isseroff, L.Y.4    Liao, P.5    Carter, E.A.6
  • 14
    • 84856419073 scopus 로고    scopus 로고
    • Band discontinuities at Si-TCO interfaces from quasiparticle calculations: Comparison of two alignment approaches
    • 035305
    • Höffling, B.; Schleife, A.; Rödl, C.; Bechstedt, F. Band discontinuities at Si-TCO interfaces from quasiparticle calculations: Comparison of two alignment approaches Phys. Rev. B 2012, 85 035305
    • (2012) Phys. Rev. B , vol.85
    • Höffling, B.1    Schleife, A.2    Rödl, C.3    Bechstedt, F.4
  • 15
    • 48749132271 scopus 로고    scopus 로고
    • InN/GaN valence band offset: High-resolution X-ray photoemission spectroscopy measurements
    • 033308
    • King, P.; Veal, T. D.; Kendrick, C. E.; Durbin, S. M.; McConville, C. F. InN/GaN valence band offset: High-resolution X-ray photoemission spectroscopy measurements Phys. Rev. B 2008, 78 033308
    • (2008) Phys. Rev. B , vol.78
    • King, P.1    Veal, T.D.2    Kendrick, C.E.3    Durbin, S.M.4    McConville, C.F.5
  • 16
    • 4243933586 scopus 로고
    • CdTe-HgTe (1Ì...1Ì...1Ì...) heterojunction valence-band discontinuity: A common-anion-rule contradiction
    • Kowalczyk, S. P.; Cheung, J. T.; Kraut, E. A.; Grant, R. W. CdTe-HgTe (1Ì...1Ì...1Ì...) heterojunction valence-band discontinuity: A common-anion-rule contradiction Phys. Rev. Lett. 1986, 56, 1605-1608
    • (1986) Phys. Rev. Lett. , vol.56 , pp. 1605-1608
    • Kowalczyk, S.P.1    Cheung, J.T.2    Kraut, E.A.3    Grant, R.W.4
  • 19
    • 0001074048 scopus 로고    scopus 로고
    • Valence band splittings and band offsets of AlN, GaN, and InN
    • Wei, S.-H.; Zunger, A. Valence band splittings and band offsets of AlN, GaN, and InN Appl. Phys. Lett. 1996, 69, 2719-2721 (Pubitemid 126592924)
    • (1996) Applied Physics Letters , vol.69 , Issue.18 , pp. 2719-2721
    • Wei, S.-H.1    Zunger, A.2
  • 20
    • 51149124316 scopus 로고    scopus 로고
    • Band offsets at semiconductor-oxide interfaces from hybrid density-functional calculations
    • 106802
    • Alkauskas, A.; Broqvist, P.; Devynck, F.; Pasquarello, A. Band offsets at semiconductor-oxide interfaces from hybrid density-functional calculations Phys. Rev. Lett. 2008, 101 106802
    • (2008) Phys. Rev. Lett. , vol.101
    • Alkauskas, A.1    Broqvist, P.2    Devynck, F.3    Pasquarello, A.4
  • 21
    • 33745097765 scopus 로고    scopus 로고
    • Ab initio all-electron calculation of absolute volume deformation potentials of IV-IV, III-V, and II-VI semiconductors: The chemical trends
    • 245206
    • Li, Y. H.; Gong, X. G.; Wei, S.-H. Ab initio all-electron calculation of absolute volume deformation potentials of IV-IV, III-V, and II-VI semiconductors: The chemical trends Phys. Rev. B 2006, 73 245206
    • (2006) Phys. Rev. B , vol.73
    • Li, Y.H.1    Gong, X.G.2    Wei, S.-H.3
  • 22
    • 0001428924 scopus 로고    scopus 로고
    • Calculated natural band offsets of all II-VI and III-V semiconductors: Chemical trends and the role of cation d orbitals
    • DOI 10.1063/1.121249, PII S0003695198033166
    • Wei, S. H.; Zunger, A. Calculated natural band offsets of all II-VI and III-V semiconductors: Chemical trends and the role of cation d orbitals Appl. Phys. Lett. 1998, 72, 2011-2013 (Pubitemid 128671321)
    • (1998) Applied Physics Letters , vol.72 , Issue.16 , pp. 2011-2013
    • Wei, S.-H.1    Zunger, A.2
  • 23
    • 0000237514 scopus 로고    scopus 로고
    • Small valence-band offsets at GaN/InGaN heterojunctions
    • Van de Walle, C. G.; Neugebauer, J. Small valence-band offsets at GaN/InGaN heterojunctions Appl. Phys. Lett. 1997, 70, 2577-2579 (Pubitemid 127608417)
    • (1997) Applied Physics Letters , vol.70 , Issue.19 , pp. 2577-2579
    • Van De Walle, C.G.1    Neugebauer, J.2
  • 25
    • 58549083220 scopus 로고    scopus 로고
    • Semiconductor thermochemistry in density functional calculations
    • 245207
    • Lany, S. Semiconductor thermochemistry in density functional calculations Phys. Rev. B 2008, 78 245207
    • (2008) Phys. Rev. B , vol.78
    • Lany, S.1
  • 26
    • 4244042114 scopus 로고    scopus 로고
    • First-principles atomistic thermodynamics for oxidation catalysis: Surface phase diagrams and catalytically interesting regions
    • 046103
    • Reuter, K.; Scheffler, M. First-principles atomistic thermodynamics for oxidation catalysis: surface phase diagrams and catalytically interesting regions Phys. Rev. Lett. 2003, 90 046103
    • (2003) Phys. Rev. Lett. , vol.90
    • Reuter, K.1    Scheffler, M.2
  • 27
    • 84864213619 scopus 로고    scopus 로고
    • Alignment of electronic energy levels at electrochemical interfaces
    • Cheng, J.; Sprik, M. Alignment of electronic energy levels at electrochemical interfaces Phys. Chem. Chem. Phys. 2012, 14, 11245-11267
    • (2012) Phys. Chem. Chem. Phys. , vol.14 , pp. 11245-11267
    • Cheng, J.1    Sprik, M.2
  • 28
  • 29
    • 84866716771 scopus 로고    scopus 로고
    • Thermodynamic oxidation and reduction potentials of photocatalytic semiconductors in aqueous solution
    • Chen, S.; Wang, L.-W. Thermodynamic oxidation and reduction potentials of photocatalytic semiconductors in aqueous solution Chem. Mater. 2012, 24, 3659-3666
    • (2012) Chem. Mater. , vol.24 , pp. 3659-3666
    • Chen, S.1    Wang, L.-W.2
  • 30
    • 0017994858 scopus 로고
    • Electrolytic decomposition and photodecomposition of compound semiconductors in contact with electrolytes
    • Gerischer, H. Electrolytic decomposition and photodecomposition of compound semiconductors in contact with electrolytes J. Vac. Sci. Technol. 1978, 15, 1422-1428 (Pubitemid 8634992)
    • (1978) J Vac Sci Technol , vol.15 , Issue.4 , pp. 1422-1428
    • Gerischer Heinz1
  • 31
    • 0002973815 scopus 로고
    • On the stability of semiconductor electrodes against photodecomposition
    • Gerischer, H. On the stability of semiconductor electrodes against photodecomposition J. Electroanal. Chem. Interfacial Electrochem. 1977, 82, 133-143
    • (1977) J. Electroanal. Chem. Interfacial Electrochem. , vol.82 , pp. 133-143
    • Gerischer, H.1
  • 32
    • 33750668607 scopus 로고
    • Band lineups and deformation potentials in the model-solid theory
    • Van de Walle, C. G. Band lineups and deformation potentials in the model-solid theory Phys. Rev. B 1989, 39, 1871-1883
    • (1989) Phys. Rev. B , vol.39 , pp. 1871-1883
    • Van De Walle, C.G.1
  • 33
    • 3343011193 scopus 로고
    • Physical Content of the Exact Kohn-Sham Orbital Energies: Band Gaps and Derivative Discontinuities
    • Perdew, J. P.; Levy, M. Physical Content of the Exact Kohn-Sham Orbital Energies: Band Gaps and Derivative Discontinuities Phys. Rev. Lett. 1983, 51, 1884-1887
    • (1983) Phys. Rev. Lett. , vol.51 , pp. 1884-1887
    • Perdew, J.P.1    Levy, M.2
  • 34
    • 4243209020 scopus 로고
    • Density-Functional Theory of the Energy Gap
    • Sham, L. J.; Schlüter, M. Density-Functional Theory of the Energy Gap Phys. Rev. Lett. 1983, 51, 1888-1891
    • (1983) Phys. Rev. Lett. , vol.51 , pp. 1888-1891
    • Sham, L.J.1    Schlüter, M.2
  • 36
    • 34547187613 scopus 로고    scopus 로고
    • Why does the B3LYP hybrid functional fail for metals?
    • 024103
    • Paier, J.; Marsman, M.; Kresse, G. Why does the B3LYP hybrid functional fail for metals? J. Chem. Phys. 2007, 127 024103
    • (2007) J. Chem. Phys. , vol.127
    • Paier, J.1    Marsman, M.2    Kresse, G.3
  • 38
    • 70350584534 scopus 로고    scopus 로고
    • Heyd-Scuseria-Ernzerhof hybrid functional for calculating the lattice dynamics of semiconductors
    • 115205
    • Hummer, K.; Harl, J.; Kresse, G. Heyd-Scuseria-Ernzerhof hybrid functional for calculating the lattice dynamics of semiconductors Phys. Rev. B 2009, 80 115205
    • (2009) Phys. Rev. B , vol.80
    • Hummer, K.1    Harl, J.2    Kresse, G.3
  • 39
    • 3242884626 scopus 로고    scopus 로고
    • Efficient hybrid density functional calculations in solids: Assessment of the Heyd - Scuseria - Ernzerhof screened Coulomb hybrid functional
    • Heyd, J.; Scuseria, G. E. Efficient hybrid density functional calculations in solids: Assessment of the Heyd - Scuseria - Ernzerhof screened Coulomb hybrid functional J. Chem. Phys. 2004, 121, 1187-1192
    • (2004) J. Chem. Phys. , vol.121 , pp. 1187-1192
    • Heyd, J.1    Scuseria, G.E.2
  • 40
    • 36149016819 scopus 로고
    • New Method for Calculating the One-Particle Green's Function with Application to the Electron-Gas Problem
    • Hedin, L. New Method for Calculating the One-Particle Green's Function with Application to the Electron-Gas Problem Phys. Rev. 1965, 139, A796-A823
    • (1965) Phys. Rev. , vol.139
    • Hedin, L.1
  • 41
    • 0001242106 scopus 로고
    • Germanium-Gallium Arsenide Heterojunctions
    • Anderson, R. Germanium-Gallium Arsenide Heterojunctions IBM J. Res. Dev. 1960, 4, 283-287
    • (1960) IBM J. Res. Dev. , vol.4 , pp. 283-287
    • Anderson, R.1
  • 42
    • 4043174612 scopus 로고
    • Prediction of Fermi Energies and Photoelectric Thresholds Based on Electronegativity Concepts
    • Nethercot, A. H. Prediction of Fermi Energies and Photoelectric Thresholds Based on Electronegativity Concepts Phys. Rev. Lett. 1974, 33, 1088-1091
    • (1974) Phys. Rev. Lett. , vol.33 , pp. 1088-1091
    • Nethercot, A.H.1
  • 43
    • 0017935437 scopus 로고
    • Prediction of flatband potentials at semiconductor-electrolyte interfaces from atomic electronegativities
    • Butler, M. A.; Ginley, D. S. Prediction of Flatband Potentials at Semiconductor-Electrolyte Interfaces from Atomic Electronegativities J. Electrochem. Soc. 1978, 125, 228-232 (Pubitemid 8579131)
    • (1978) Journal of the Electrochemical Society , vol.125 , Issue.2 , pp. 228-232
    • Butler, M.A.1    Ginley, D.S.2
  • 44
    • 0342265131 scopus 로고    scopus 로고
    • The absolute energy positions of conduction and valence bands of selected semiconducting minerals
    • Xu, Y.; Schoonen, M. A. A. The absolute energy positions of conduction and valence bands of selected semiconducting minerals Am. Mineral. 2000, 85, 543-556 (Pubitemid 30236918)
    • (2000) American Mineralogist , vol.85 , Issue.3-4 , pp. 543-556
    • Yong, X.1    Schoonen, M.A.A.2
  • 47
    • 84858341750 scopus 로고    scopus 로고
    • Energy band alignment at interfaces of semiconducting oxides: A review of experimental determination using photoelectron spectroscopy and comparison with theoretical predictions by the electron affinity rule, charge neutrality levels, and the common anion rule
    • Klein, A. Energy band alignment at interfaces of semiconducting oxides: A review of experimental determination using photoelectron spectroscopy and comparison with theoretical predictions by the electron affinity rule, charge neutrality levels, and the common anion rule Thin Solid Films 2012, 520, 3721-3728
    • (2012) Thin Solid Films , vol.520 , pp. 3721-3728
    • Klein, A.1
  • 48
    • 0001597428 scopus 로고
    • Schottky barrier heights and the continuum of gap states
    • Tersoff, J. Schottky barrier heights and the continuum of gap states Phys. Rev. Lett. 1984, 52, 465-468
    • (1984) Phys. Rev. Lett. , vol.52 , pp. 465-468
    • Tersoff, J.1
  • 49
    • 3743067479 scopus 로고
    • Theory of surface states
    • Heine, V. Theory of surface states Phys. Rev. 1965, 138, A1689-A1696
    • (1965) Phys. Rev. , vol.138
    • Heine, V.1
  • 50
    • 0000319664 scopus 로고
    • Acoustic deformation potentials and heterostructure band offsets in semiconductors
    • Cardona, M.; Christensen, N. E. Acoustic deformation potentials and heterostructure band offsets in semiconductors Phys. Rev. B 1987, 35, 6182-6194
    • (1987) Phys. Rev. B , vol.35 , pp. 6182-6194
    • Cardona, M.1    Christensen, N.E.2
  • 51
    • 0642371886 scopus 로고    scopus 로고
    • Empirical tight-binding calculation of the branch-point energy of the continuum of interface-induced gap states
    • Monch, W. Empirical tight-binding calculation of the branch-point energy of the continuum of interface-induced gap states J. Appl. Phys. 1996, 80, 5076-5082 (Pubitemid 126586223)
    • (1996) Journal of Applied Physics , vol.80 , Issue.9 , pp. 5076-5082
    • Monch, W.1
  • 52
    • 0034187380 scopus 로고    scopus 로고
    • Band offsets of wide-band-gap oxides and implications for future electronic devices
    • Robertson, J. Band offsets of wide-band-gap oxides and implications for future electronic devices J. Vac. Sci. Technol. B 2000, 18, 1785-1791
    • (2000) J. Vac. Sci. Technol. B , vol.18 , pp. 1785-1791
    • Robertson, J.1
  • 53
    • 58149522467 scopus 로고    scopus 로고
    • Branch-point energies and band discontinuities of III-nitrides and III-/II-oxides from quasiparticle band-structure calculations
    • 012104
    • Schleife, A.; Fuchs, F.; Rodl, C.; Furthmuller, J.; Bechstedt, F. Branch-point energies and band discontinuities of III-nitrides and III-/II-oxides from quasiparticle band-structure calculations Appl. Phys. Lett. 2009, 94 012104
    • (2009) Appl. Phys. Lett. , vol.94
    • Schleife, A.1    Fuchs, F.2    Rodl, C.3    Furthmuller, J.4    Bechstedt, F.5
  • 54
    • 79959396037 scopus 로고    scopus 로고
    • Branch-point energies and the band-structure lineup at Schottky contacts and heterostrucures
    • 113724
    • Monch, W. Branch-point energies and the band-structure lineup at Schottky contacts and heterostrucures J. Appl. Phys. 2011, 109 113724
    • (2011) J. Appl. Phys. , vol.109
    • Monch, W.1
  • 55
    • 33645608533 scopus 로고
    • Momentum-space formalism for the total energy of solids
    • J Ihm, A. Z.; Cohen, M. L. Momentum-space formalism for the total energy of solids J. Phys.: Condens. Matter 1979, 12, 4409-4422
    • (1979) J. Phys.: Condens. Matter , vol.12 , pp. 4409-4422
    • Ihm A Z, J.1    Cohen, M.L.2
  • 56
    • 84873746853 scopus 로고    scopus 로고
    • Transparent conducting oxides: Electronic structure-property relationship from photoelectron spectroscopy with in situ sample preparation
    • Klein, A. Transparent conducting oxides: Electronic structure-property relationship from photoelectron spectroscopy with in situ sample preparation J. Am. Ceram. Soc. 2012, 96, 331-345
    • (2012) J. Am. Ceram. Soc. , vol.96 , pp. 331-345
    • Klein, A.1
  • 57
    • 84875717286 scopus 로고    scopus 로고
    • Electronic origin of the conductivity imbalance between covalent and ionic amorphous semiconductors
    • 125203
    • Deng, H.-X.; Wei, S.-H.; Li, S.-S.; Li, J.; Walsh, A. Electronic origin of the conductivity imbalance between covalent and ionic amorphous semiconductors Phys. Rev. B 2013, 87 125203
    • (2013) Phys. Rev. B , vol.87
    • Deng, H.-X.1    Wei, S.-H.2    Li, S.-S.3    Li, J.4    Walsh, A.5
  • 59
    • 57749097119 scopus 로고    scopus 로고
    • A piece of the picture - Misunderstanding of chemical concepts
    • Jansen, M.; Wedig, U. A piece of the picture-misunderstanding of chemical concepts Angew. Chem., Int. Ed. 2008, 47, 10026-10029
    • (2008) Angew. Chem., Int. Ed. , vol.47 , pp. 10026-10029
    • Jansen, M.1    Wedig, U.2
  • 60
    • 0000135264 scopus 로고
    • The meaning of the oxygen second-electron affinity and oxide potential models
    • Harding, J. H.; Pyper, N. C. The meaning of the oxygen second-electron affinity and oxide potential models Philos. Mag. Lett. 1995, 71, 113-121
    • (1995) Philos. Mag. Lett. , vol.71 , pp. 113-121
    • Harding, J.H.1    Pyper, N.C.2
  • 61
    • 0242341371 scopus 로고    scopus 로고
    • The general utility lattice program
    • Gale, J. D.; Rohl, A. L. The general utility lattice program Mol. Simul. 2003, 29, 291-341
    • (2003) Mol. Simul. , vol.29 , pp. 291-341
    • Gale, J.D.1    Rohl, A.L.2
  • 63
    • 79960079188 scopus 로고    scopus 로고
    • Surface oxygen vacancy origin of electron accumulation in indium oxide
    • 261910
    • Walsh, A. Surface oxygen vacancy origin of electron accumulation in indium oxide Appl. Phys. Lett. 2011, 98 261910
    • (2011) Appl. Phys. Lett. , vol.98
    • Walsh, A.1
  • 64
    • 0042812159 scopus 로고
    • Vacancy formation energies near the surface of an ionic crystal
    • Duffy, D. M.; Hoare, J. P.; Tasker, P. W. Vacancy formation energies near the surface of an ionic crystal J. Phys.: Condens. Matter 1984, 17, L195-L200
    • (1984) J. Phys.: Condens. Matter , vol.17
    • Duffy, D.M.1    Hoare, J.P.2    Tasker, P.W.3
  • 65
    • 84894285789 scopus 로고    scopus 로고
    • https://github.com/WMD-Bath/Oxide-Electrostatics
  • 66
    • 4344599065 scopus 로고
    • The electronic structure of divalent transition metal oxides
    • Catlow, C. R. A.; Muxworthy, D. G. The electronic structure of divalent transition metal oxides Philos. Mag. B 1978, 37, 63-71
    • (1978) Philos. Mag. B , vol.37 , pp. 63-71
    • Catlow, C.R.A.1    Muxworthy, D.G.2
  • 68
    • 33749221900 scopus 로고
    • Surface properties of II-VI compounds
    • Swank, R. K. Surface properties of II-VI compounds Phys. Rev. 1967, 153, 844-849
    • (1967) Phys. Rev. , vol.153 , pp. 844-849
    • Swank, R.K.1
  • 69
    • 4344707777 scopus 로고    scopus 로고
    • Hybrid QM/MM embedding approach for the treatment of localized surface states in ionic materials
    • Sokol, A. A.; Bromley, S. T.; French, S. A.; Catlow, C. R. A.; Sherwood, P. Hybrid QM/MM embedding approach for the treatment of localized surface states in ionic materials Int. J. Quantum Chem. 2004, 99, 695-712
    • (2004) Int. J. Quantum Chem. , vol.99 , pp. 695-712
    • Sokol, A.A.1    Bromley, S.T.2    French, S.A.3    Catlow, C.R.A.4    Sherwood, P.5
  • 71
    • 0009435874 scopus 로고
    • Conduction in polar crystals. I. Electrolytic conduction in solid salts
    • Mott, N. F.; Littleton, M. J. Conduction in polar crystals. I. Electrolytic conduction in solid salts Trans. Faraday. Soc. 1938, 34, 485-499
    • (1938) Trans. Faraday. Soc. , vol.34 , pp. 485-499
    • Mott, N.F.1    Littleton, M.J.2
  • 73
    • 78649296478 scopus 로고    scopus 로고
    • Structure, stability and work functions of the low index surfaces of pure indium oxide and Sn-doped indium oxide (ITO) from density functional theory
    • Walsh, A.; Catlow, C. R. A. Structure, stability and work functions of the low index surfaces of pure indium oxide and Sn-doped indium oxide (ITO) from density functional theory J. Mater. Chem. 2010, 20, 10438-10444
    • (2010) J. Mater. Chem. , vol.20 , pp. 10438-10444
    • Walsh, A.1    Catlow, C.R.A.2
  • 77
  • 79
    • 14944357695 scopus 로고    scopus 로고
    • 2O(1 1 1) surface
    • DOI 10.1016/j.susc.2005.01.038, PII S0039602805000944
    • 2O (111) surface Surf. Sci. 2005, 579, 131-140 (Pubitemid 40370271)
    • (2005) Surface Science , vol.579 , Issue.2-3 , pp. 131-140
    • Soon, A.1    Sohnel, T.2    Idriss, H.3
  • 81
    • 80051935627 scopus 로고    scopus 로고
    • Multi-component transparent conducting oxides: Progress in materials modelling
    • 334210
    • Walsh, A.; Da Silva, J. L. F.; Wei, S. H. Multi-component transparent conducting oxides: progress in materials modelling J. Phys.: Condens. Matter 2011, 23 334210
    • (2011) J. Phys.: Condens. Matter , vol.23
    • Walsh, A.1    Da Silva, J.L.F.2    Wei, S.H.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.