Importance of the correct Fermi energy on the calculation of defect formation energies in semiconductors

Applied Physics Letters

Volumn 101, Issue 8, 2012, Pages

  West, D ^a   Sun, Y Y ^a   Zhang, S B ^a  

^a Rensselaer Polytechnic Institute   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEFECT FORMATION ENERGIES; DEFECTS IN SEMICONDUCTORS; DENSITY FUNCTIONAL THEORIES (DFT); DFT BAND GAP; FUNCTIONAL METHODS;

DENSITY FUNCTIONAL THEORY; FERMI LEVEL;

DEFECTS;

EID: 84865527536     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4745779     Document Type: Article

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