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Journal of Crystal Growth

Volumn 370, Issue , 2013, Pages 46-50

Photoluminescence properties of InGaAsN films on Ge(001) vicinal substrates

(4) Uesugi, K a Kuboya, S a Sanorpim, S b Onabe, K a

a UNIVERSITY OF TOKYO (Japan)

b CHULALONGKORN UNIVERSITY (Thailand)

Author keywords

A1. Photoluminescence; A3. Metalorganic vapor phase epitaxy; B1. Dilute nitride; B2. Semiconducting quaternary alloys

Indexed keywords

CARBON; CRYSTAL DEFECTS; CRYSTAL IMPURITIES; EPITAXIAL GROWTH; GERMANIUM; LUMINESCENCE; ORGANOMETALLICS; PHOTOLUMINESCENCE; RAPID THERMAL ANNEALING; SURFACE DEFECTS; VAPOR PHASE EPITAXY;

COMPOSITIONAL NON UNIFORMITIES; DILUTE NITRIDES; LUMINESCENCE PROPERTIES; METAL-ORGANIC VAPOR PHASE EPITAXY; PHOTOLUMINESCENCE PROPERTIES; POTENTIAL FLUCTUATIONS; RAPID THERMAL ANNEALING (RTA); SEMICONDUCTING QUATERNARY ALLOYS;

METALLORGANIC VAPOR PHASE EPITAXY;

EID: 84893817239 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2012.09.024 Document Type: Article

Times cited : (7)

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