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Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 9, Issue 3-4, 2012, Pages 542-545

MOVPE growth of InGaAsN films on Ge(001) on-axis and vicinal substrates

(5) Uesugi, K a Kikuchi, T a Kuboya, S a Sanorpim, S b Onabe, K a

a UNIVERSITY OF TOKYO (Japan)

b CHULALONGKORN UNIVERSITY (Thailand)

Author keywords

Ge; InGaAsN; MOVPE; Vicinal substrate

Indexed keywords

AFM IMAGE; ANTIPHASE DOMAINS; COMPOSITIONAL UNIFORMITY; FITTING CURVES; INGAASN; LATTICE-MATCHED; MOVPE GROWTH; N INCORPORATION; NONUNIFORMITY; PEAK ENERGY; PHOTOLUMINESCENCE PROPERTIES; PL PROPERTY; POTENTIAL FLUCTUATIONS; S SHAPE; SUBMICRON-SIZED; SURFACE FLATNESS; TEMPERATURE DEPENDENCE; VICINAL SUBSTRATES;

CURVE FITTING; GERMANIUM; METALLORGANIC VAPOR PHASE EPITAXY;

SUBSTRATES;

EID: 84858847626 PISSN: 18626351 EISSN: 16101642 Source Type: Journal
DOI: 10.1002/pssc.201100360 Document Type: Article

Times cited : (4)

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