Influence of structural nonuniformity and nonradiative processes on the luminescence efficiency of InGaAsN quantum wells

Applied Physics Letters

Volumn 88, Issue 1, 2006, Pages

  Geelhaar, L ^a   Galluppi, M ^a   Jaschke, G ^a   Averbeck, R ^a   Riechert, H ^a   Remmele, T ^b   Albrecht, M ^b   Dworzak, M ^c   Hildebrant, R ^c   Hoffmann, A ^c  

^a INFINEON TECHNOLOGIES AG   (Germany)

^b LEIBNIZ INSTITUTE FOR CRYSTAL GROWTH   (Germany)

^c TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; COMPOSITION; LUMINESCENCE; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM COMPOUNDS;

DEGREE OF LOCALIZATION; LUMINESCENCE EFFICIENCY; STRUCTURAL NONUNIFORMITY;

SEMICONDUCTOR QUANTUM WELLS;

EID: 33645498113     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2159566     Document Type: Article

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