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Volumn 203, Issue 7, 2006, Pages 1612-1617

High-nitrogen-content InGaAsN films on GaAs grown by metalorganic vapor phase epitaxy with TBAs and DMHy

Author keywords

[No Author keywords available]

Indexed keywords

1,1-DIMETHYLHYDRAZINE (DMHY) MOLAR FLOW RATE; PHOTOREFLACTANCE (PR); SINGLE-PHASE DILUTE-NITRIDE-ARSENIDE ALLOY SEMICONDUCTORS;

METALLORGANIC VAPOR PHASE EPITAXY; NITROGEN; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; X RAY DIFFRACTION ANALYSIS;

SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

EID: 33745037038 PISSN: 18626300 EISSN: 18626319 Source Type: Journal
DOI: 10.1002/pssa.200565240 Document Type: Article

Times cited : (9)

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