SCOPUS 정보 검색 플랫폼

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 44, Issue 11, 2005, Pages 7777-7784

Low temperature growth GaAs on Ge

(8) Knuuttila, L a Lankinen, A a Likonen, J b Lipsanen, H a Lu, X c McNally, P c Riikonen, J a Tuomi, T a

a AALTO UNIVERSITY (Finland)

b VTT TECHNICAL RESEARCH CENTRE OF FINLAND (Finland)

c DUBLIN CITY UNIVERSITY (Ireland)

Author keywords

Atomic force microscopy; GaAs; Germanium substrate; Metalorganic vapor phase epitaxy; Photo luminescence; Secondary ion mass spectrometry; X ray diffraction; X ray topography

Indexed keywords

ATOMIC FORCE MICROSCOPY; DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; GERMANIUM; METALLORGANIC VAPOR PHASE EPITAXY; SECONDARY ION MASS SPECTROMETRY; SYNCHROTRONS; THERMAL EFFECTS;

GERMANIUM SUBSTRATE; X-RAY TOPOGRAPHY;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 31644446794 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.44.7777 Document Type: Article

Times cited : (30)

References (35)

1
- 0037212401
- J. Derluyn, K. Dessein, G. Flamand, Y. Mols, J. Poortmans, G. Borghs and I. Moerman: J. Cryst. Growth 247 (2003) 237.
- (2003) J. Cryst. Growth , vol.247 , pp. 237
- Derluyn, J.¹ Dessein, K.² Flamand, G.³ Mols, Y.⁴ Poortmans, J.⁵ Borghs, G.⁶ Moerman, I.⁷

2
- 0041476489
- Academic, New York
- L. Darken, C. Cox, T. Schlesinger and R. James: Semiconductors and Semimetals (Academic, New York, 1995) Vol. 43.
- (1995) Semiconductors and Semimetals , vol.43
- Darken, L.¹ Cox, C.² Schlesinger, T.³ James, R.⁴

3
- 0032477204
- M. D'Hondt, Z.-Q. Yu, B. Depreter, C. Sys, I. Moerman, P. Demeester and P. Mijlemans: J. Cryst. Growth 195 (1998) 655.
- (1998) J. Cryst. Growth , vol.195 , pp. 655
- D'Hondt, M.¹ Yu, Z.-Q.² Depreter, B.³ Sys, C.⁴ Moerman, I.⁵ Demeester, P.⁶ Mijlemans, P.⁷

4
- 0034051420
- L. Lazzarini, L. Nasi, G. Salviati, C. Fregonara, Y. Li, L. Giling, C. Hardingham and D. Holt: Micron 31 (2000) 217.
- (2000) Micron , vol.31 , pp. 217
- Lazzarini, L.¹ Nasi, L.² Salviati, G.³ Fregonara, C.⁴ Li, Y.⁵ Giling, L.⁶ Hardingham, C.⁷ Holt, D.⁸

5
- 0035444782
- N. Cho and C. Carter: J. Mater. Sci. 36 (2001) 4209.
- (2001) J. Mater. Sci. , vol.36 , pp. 4209
- Cho, N.¹ Carter, C.²

6
- 0000052659
- S. Ting and E. Fitzgerald: J. Appl. Phys. 87 (2000) 2618.
- (2000) J. Appl. Phys. , vol.87 , pp. 2618
- Ting, S.¹ Fitzgerald, E.²

7
- 0030165093
- Y. Li, G. Salviati, M. Bongers, L. Lazzarini, L. Nasi and L. Giling: J. Cryst. Growth 163 (1996) 195.
- (1996) J. Cryst. Growth , vol.163 , pp. 195
- Li, Y.¹ Salviati, G.² Bongers, M.³ Lazzarini, L.⁴ Nasi, L.⁵ Giling, L.⁶

8
- 0012827431
- N. Chand, J. Klem, T. Henderson and H. Morkoc: J. Appl. Phys. 59 (1986) 3601.
- (1986) J. Appl. Phys. , vol.59 , pp. 3601
- Chand, N.¹ Klem, J.² Henderson, T.³ Morkoc, H.⁴

9
- 0000015076
- R. Fischer, W. Masselink, J. Klem, T. Henderson, T. McGlinn, H. Morkoc, J. Mazur and J. Washburn: J. Appl. Phys. 58 (1985) 374.
- (1985) J. Appl. Phys. , vol.58 , pp. 374
- Fischer, R.¹ Masselink, W.² Klem, J.³ Henderson, T.⁴ McGlinn, T.⁵ Morkoc, H.⁶ Mazur, J.⁷ Washburn, J.⁸

10
- 24244452897
- D. Aspnes and A. Studna: Appl. Phys. Lett. 39 (1981) 316.
- (1981) Appl. Phys. Lett. , vol.39 , pp. 316
- Aspnes, D.¹ Studna, A.²

11
- 0026963884
- G. Timó, C. Flores, B. Bollani, D. Passoni, C. Bocchi, P. Franzosi, L. Lazzarini and G. Salviati: J. Cryst. Growth 125 (1992) 440.
- (1992) J. Cryst. Growth , vol.125 , pp. 440
- Timó, G.¹ Flores, C.² Bollani, B.³ Passoni, D.⁴ Bocchi, C.⁵ Franzosi, P.⁶ Lazzarini, L.⁷ Salviati, G.⁸

12
- 0000638862
- M. Hudait, P. Modak, S. Hardiker and S. Krupanidhi: J. Appl. Phys. 83 (1998) 4454.
- (1998) J. Appl. Phys. , vol.83 , pp. 4454
- Hudait, M.¹ Modak, P.² Hardiker, S.³ Krupanidhi, S.⁴

13
- 0000804930
- S. Arrhenius: Z. Phys. Chem. 4 (1889) 226.
- (1889) Z. Phys. Chem. , vol.4 , pp. 226
- Arrhenius, S.¹

14
- 0346985100
- E. Vainonen-Alhgren, T. Ahlgren, J. Likonen, S. Lehto, J. Keinonen, W. Li and J. Haapamaa: Appl. Phys. Lett. 77 (2000) 690.
- (2000) Appl. Phys. Lett. , vol.77 , pp. 690
- Vainonen-Alhgren, E.¹ Ahlgren, T.² Likonen, J.³ Lehto, S.⁴ Keinonen, J.⁵ Li, W.⁶ Haapamaa, J.⁷

15
- 0037986715
- V. Yang, S. Ting, M. Groenert, M. Bulsara, M. Currie, C. Leitz and E. Fitzgerald: J. Appl. Phys. 93 (2003) 5095.
- (2003) J. Appl. Phys. , vol.93 , pp. 5095
- Yang, V.¹ Ting, S.² Groenert, M.³ Bulsara, M.⁴ Currie, M.⁵ Leitz, C.⁶ Fitzgerald, E.⁷

16
- 31644443797
- (Imperial College Press, London), Chap. 4
- P. Fewster: X-ray Diffraction from Semiconductors (Imperial College Press, London, 2000) Chap. 4, p. 216.
- (2000) X-ray Diffraction from Semiconductors , pp. 216
- Fewster, P.¹

17
- 0016104390
- T. Tuomi, K. Naukkarinen and P. Rabe: Phys. Status Solidi A 25 (1974) 93.
- (1974) Phys. Status Solidi A , vol.25 , pp. 93
- Tuomi, T.¹ Naukkarinen, K.² Rabe, P.³

18
- 0036587165
- T. Tuomi: J. Synchrotron Radiat. 9 (2002) 174.
- (2002) J. Synchrotron Radiat. , vol.9 , pp. 174
- Tuomi, T.¹

19
- 0001235605
- S. Strite, D. Biswas, K. Adomi and H. Morkoc: J. Appl. Phys. 67 (1990) 1609.
- (1990) J. Appl. Phys. , vol.67 , pp. 1609
- Strite, S.¹ Biswas, D.² Adomi, K.³ Morkoc, H.⁴

20
- 36449002529
- Y. Li, L. Lazzarini, L. Giling and G. Salviati: J. Appl. Phys. 76 (1994) 5748.
- (1994) J. Appl. Phys. , vol.76 , pp. 5748
- Li, Y.¹ Lazzarini, L.² Giling, L.³ Salviati, G.⁴

21
- 0030080142
- J. Ishizaki, K. Ohkuri and T. Fukui: Jpn. J. Appl. Phys. 35 (1996) 1280.
- (1996) Jpn. J. Appl. Phys. , vol.35 , pp. 1280
- Ishizaki, J.¹ Ohkuri, K.² Fukui, T.³

22
- 0016102155
- H. Nagai: J. Appl. Phys. 45 (1974) 3789.
- (1974) J. Appl. Phys. , vol.45 , pp. 3789
- Nagai, H.¹

23
- 0027701387
- P. Fewster: Semicond. Sci. Technol. 8 (1993) 1915.
- (1993) Semicond. Sci. Technol. , vol.8 , pp. 1915
- Fewster, P.¹

24
- 0031618149
- T. Tuomi, M. Juvonen, R. Rantamaki, K. Hjelt, M. Bavdaz and S. Nenonen: Mater. Res. Soc. Symp. Proc. 487 (1998) 459.
- (1998) Mater. Res. Soc. Symp. Proc. , vol.487 , pp. 459
- Tuomi, T.¹ Juvonen, M.² Rantamaki, R.³ Hjelt, K.⁴ Bavdaz, M.⁵ Nenonen, S.⁶

25
- 0036530549
- T. Tuomi, L. Knuuttila, J. Riikonen, P. McNally, W. Chen, J. Kanatharana, M. Neubert and P. Rudolph: J. Cryst. Growth 237-239 (2002) 350.
- (2002) J. Cryst. Growth , vol.237-239 , pp. 350
- Tuomi, T.¹ Knuuttila, L.² Riikonen, J.³ McNally, P.⁴ Chen, W.⁵ Kanatharana, J.⁶ Neubert, M.⁷ Rudolph, P.⁸

26
- 0014805170
- J. Patel and P. Freeland: J. Appl. Phys. 41 (1970) 2814.
- (1970) J. Appl. Phys. , vol.41 , pp. 2814
- Patel, J.¹ Freeland, P.²

27
- 36149021650
- M. Sturge: Phys. Rev. 127 (1962) 768.
- (1962) Phys. Rev. , vol.127 , pp. 768
- Sturge, M.¹

28
- 3342973084
- H. Kressel, F. Hawrylo and P. LeFur: J. Appl. Phys. 39 (1968) 4059.
- (1968) J. Appl. Phys. , vol.39 , pp. 4059
- Kressel, H.¹ Hawrylo, F.² LeFur, P.³

29
- 0020748329
- M. Bafleur, A. Munoz-Yague, J. Castano and J. Piqueras: J. Appl. Phys. 54 (1983) 2630.
- (1983) J. Appl. Phys. , vol.54 , pp. 2630
- Bafleur, M.¹ Munoz-Yague, A.² Castano, J.³ Piqueras, J.⁴

30
- 21544462922
- L. Pavesi and M. Guzzi: J. Appl. Phys. 75 (1994) 4779.
- (1994) J. Appl. Phys. , vol.75 , pp. 4779
- Pavesi, L.¹ Guzzi, M.²

31
- 0000640786
- J. Carlin, S. Ringel, E. Fitzgerald, M. Bulsara and B. Keyes: Appl. Phys. Lett. 76 (2000) 1884.
- (2000) Appl. Phys. Lett. , vol.76 , pp. 1884
- Carlin, J.¹ Ringel, S.² Fitzgerald, E.³ Bulsara, M.⁴ Keyes, B.⁵

32
- 31644443796
- S. Wottczuk, S. Tobin, M. Sanfacon, L. Geoffroy and S. Vernon: Conf. Rec. 20th IEEE PVSC, 1991, Vol. 1, p. 73.
- (1991) Conf. Rec. 20th IEEE PVSC , vol.1 , pp. 73
- Wottczuk, S.¹ Tobin, S.² Sanfacon, M.³ Geoffroy, L.⁴ Vernon, S.⁵

33
- 21844432965
- J. Chen, M. Ladle Ristow, J. Cubbage and J. Werthen: Appl. Phys. Lett. 58 (1991) 2282.
- (1991) Appl. Phys. Lett. , vol.58 , pp. 2282
- Chen, J.¹ Ladle Ristow, M.² Cubbage, J.³ Werthen, J.⁴

34
- 0025417366
- P. A. Iles, Y.-C. M. Yeh, F. Ho, C.-L. Chu and C. Cheng: IEEE Electron Device Lett. 11 (1990) 140.
- (1990) IEEE Electron Device Lett. , vol.11 , pp. 140
- Iles, P.A.¹ Yeh, Y.-C.M.² Ho, F.³ Chu, C.-L.⁴ Cheng, C.⁵

35
- 0035356865
- M. Hudait and S. Krupanidhi: J. Appl. Phys. 89 (2001) 5972.
- (2001) J. Appl. Phys. , vol.89 , pp. 5972
- Hudait, M.¹ Krupanidhi, S.²

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.