SCOPUS 정보 검색 플랫폼

Volumn 377, Issue , 2013, Pages 32-36

High quality AlGaN grown on ELO AlN/sapphire templates

(6) Zeimer, U a Kueller, V a Knauer, A a Mogilatenko, A a Weyers, M a Kneissl, M a,b

a LEIBNIZ INSTITUT FÜR HÖCHSTFREQUENZTECHNIK (Germany)

b TECHNISCHE UNIVERSITÄT BERLIN (Germany)

Author keywords

A1. Characterization; A1. Defects; A3. Epitaxial lateral overgrowth; A3. Metalorganic chemical vapor deposition; B1. AlGaN; B3. Light emitting diodes

Indexed keywords

AL-CONCENTRATION; ALGAN; C-PLANE SAPPHIRE SUBSTRATES; EPITAXIAL LATERAL OVERGROWTH; EPITAXIALLY LATERALLY OVERGROWN; MISCUT DIRECTION; SMOOTH SURFACE; THREADING DISLOCATION DENSITIES;

EPITAXIAL GROWTH; GALLIUM; GALLIUM ALLOYS; LIGHT EMITTING DIODES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SAPPHIRE; SEMICONDUCTING ALUMINUM COMPOUNDS;

ALUMINUM;

EID: 84878376912 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2013.04.041 Document Type: Article

Times cited : (96)

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