High-mobility electron conduction in oxynitride: Anatase TaON

Chemistry of Materials

Volumn 26, Issue 2, 2014, Pages 976-981

  Suzuki, Atsushi ^a,b   Hirose, Yasushi ^a,b,c   Oka, Daichi ^a,b   Nakao, Shoichiro ^b,c   Fukumura, Tomoteru ^a,b,c   Ishii, Satoshi ^d   Sasa, Kimikazu ^d   Matsuzaki, Hiroyuki ^a   Hasegawa, Tetsuya ^a,b,c  

^a UNIVERSITY OF TOKYO   (Japan)

^b KANAGAWA ACADEMY OF SCIENCE AND TECHNOLOGY   (Japan)

^c JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^d UNIVERSITY OF TSUKUBA   (Japan)

Author keywords

anatase; high mobility; semiconductor; tantalum oxynitride; thin film

Indexed keywords

ELECTRONIC CONFIGURATION; EPITAXIAL RELATIONSHIPS; HIGH GROWTH TEMPERATURES; HIGH MOBILITY; HIGH-MOBILITY ELECTRONS; OXYNITRIDES; PLASMA-ASSISTED PULSED LASER DEPOSITION; X-RAY DIFFRACTION MEASUREMENTS;

EPITAXIAL GROWTH; OXYGEN SUPPLY; PULSED LASER DEPOSITION; REFRACTIVE INDEX; SEMICONDUCTOR DOPING; SEMICONDUCTOR MATERIALS; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

TITANIUM DIOXIDE;

EID: 84893497568     PISSN: 08974756     EISSN: 15205002     Source Type: Journal    
DOI: 10.1021/cm402720d     Document Type: Article

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