Incorporating isolated molybdenum (Mo) atoms into bilayer epitaxial graphene on 4H-SiC(0001)

ACS Nano

Volumn 8, Issue 1, 2014, Pages 970-976

  Wan, Wen ^a   Li, Hui ^b   Huang, Han ^a   Wong, Swee Liang ^c   Lv, Lu ^a   Gao, Yongli ^a   Wee, Andrew Thye Shen ^c,d  

^a CENTRAL SOUTH UNIVERSITY   (China)

^b INSTITUTE OF PHYSICS   (China)

^c NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^d National University of Singapore   (Singapore)

Author keywords

density functional theory; epitaxial graphene; molybdenum; scanning tunneling microscopy; silicon carbide

Indexed keywords

ELECTRONIC AND MAGNETIC PROPERTIES; EPITAXIAL GRAPHENE; FIRST-PRINCIPLES CALCULATION; GRAPHENE BILAYERS; GRAPHENE LATTICES; LOCAL MAGNETIC MOMENTS; LOW-TEMPERATURE SCANNING TUNNELING MICROSCOPY; TRANSITION METAL DOPANTS;

ATOMS; CALCULATIONS; DENSITY FUNCTIONAL THEORY; ELECTRONIC PROPERTIES; EPITAXIAL GROWTH; MAGNETIC MOMENTS; MOLYBDENUM; SCANNING TUNNELING MICROSCOPY; SILICON CARBIDE;

GRAPHENE;

EID: 84893496296     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn4057929     Document Type: Article

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