Atomic-scale engineering of the electrostatic landscape of semiconductor surfaces

Nano Letters

Volumn 13, Issue 6, 2013, Pages 2418-2422

  Gohlke, David ^a,c   Mishra, Rohan ^b   Restrepo, Oscar D ^b   Lee, Donghun ^a,d   Windl, Wolfgang ^b   Gupta, Jay ^a  

^a OHIO STATE UNIVERSITY   (United States)

^b The Ohio State University   (United States)

^c Yale University   (United States)

^d UNIVERSITY OF REGENSBURG   (Germany)

Author keywords

atomic manipulation; charged adatoms; GaAs; solotronics; Surface potential

Indexed keywords

ATOMIC MANIPULATION; ATOMIC PRECISION; DENSITY FUNCTIONAL THEORY CALCULATIONS; GAAS; LOW-TEMPERATURE SCANNING TUNNELING MICROSCOPES; SEMI-CONDUCTOR SURFACES; SOLOTRONICS; TUNNELING SPECTROSCOPY;

ADATOMS; DENSITY FUNCTIONAL THEORY; ELECTROSTATICS; GALLIUM ARSENIDE; MANGANESE; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING GALLIUM; SURFACE POTENTIAL;

ATOMS;

EID: 84879075239     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl400305q     Document Type: Article

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