Determination of band offsets in a-Si:H/c-Si heterojunctions from capacitance-voltage measurements: Capabilities and limits

Thin Solid Films

Volumn 515, Issue 19 SPEC. ISS., 2007, Pages 7481-7485

  Gudovskikh, A S ^a   Ibrahim, S ^a   Kleider, J P ^a   Damon Lacoste, J ^b   Roca i Cabarrocas, P ^b   Veschetti, Y ^c   Ribeyron, P J ^c  

^a UNIV PARIS SUD   (France)

^b LABORATOIRE DE PHYSIQUE DES INTERFACES ET DES COUCHES MINCES   (France)

^c CEA GRENOBLE   (France)

Author keywords

Capacitance technique; Heterostructures; Solar cells

Indexed keywords

CAPACITANCE; COMPUTER SIMULATION; FERMI LEVEL; INTERFACES (MATERIALS); SILICON COMPOUNDS; SOLAR CELLS; VOLTAGE MEASUREMENT;

CAPACITANCE TECHNIQUE; INTERFACE DEFECT DENSITY; INVERSION LAYER FORMATION;

HETEROJUNCTIONS;

EID: 34547578195     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2006.11.198     Document Type: Article

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