Room-temperature quantum microwave emitters based on spin defects in silicon carbide

Nature Physics

Volumn 10, Issue 2, 2014, Pages 157-162

  Kraus, H ^a   Soltamov, V A ^b   Riedel, D ^a   Vath S ^a   Fuchs, F ^a   Sperlich, A ^a   Baranov, P G ^b   Dyakonov, V ^a,c   Astakhov, G V ^a  

^a UNIVERSITY OF WÜRZBURG   (Germany)

^b IOFFE INSTITUTE   (Russian Federation)

^c BAVARIAN CENTER FOR APPLIED ENERGY RESEARCH ZAE BAYERN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

GROUND STATE; MAGNETIC RESONANCE; QUANTUM THEORY; SILICON CARBIDE;

ATOMIC-SCALE DEFECTS; HIGH POWER ELECTRONICS; HIGH-SPIN GROUND STATE; MICROWAVE EMISSIONS; MICROWAVE EMITTERS; OPTICALLY DETECTED MAGNETIC RESONANCE; POPULATION INVERSIONS; SILICON CARBIDE CRYSTALS;

DEFECTS;

EID: 84893338907     PISSN: 17452473     EISSN: 17452481     Source Type: Journal    
DOI: 10.1038/nphys2826     Document Type: Article

References (32)

1. O'Brien, J. L., Furusawa, A. & Vukovi, J. Photonic quantum technologies. Nature Photon. 3, 687-695 (2009
2. Santori, C., Fattal, D. & Yamamoto, Y. Single-Photon Devices and Applications (Wiley-VCH, 2010
3. Houck, A. A. et al. Generating single microwave photons in a circuit. Nature 449, 328-331 (2007
4. Astafiev, O. et al. Single artificial-Atom lasing. Nature 449, 588-590 (2007
5. Bozyigit, D. et al. Antibunching of microwave-frequency photons observed in correlation measurements using linear detectors. Nature Phys. 7, 154-158 (2010
6. Clauss, R C. & Shell, J. S. Low-Noise Systems in the Deep Space Network (Jet Propulsion Laboratory California Institute of Technology, 2008
7. Yarmus, L., Rosenthal, J. & Chopp, M. EPR of triplet excitons in tetracene crystals: Spin polarization and the role of singlet exciton fission. Chem. Phys. Lett. 16, 477-481 (1972
8. Agostini, G., Corvaja, C., Giacometti, G. & Pasimeni, L. Optical, zero-field ODMR and EPR studies of the triplet states from singlet fission in biphenyl-TCNQ and biphenyl-tetrafluoro-TCNQ charge-transfer crystals. Chem. Phys. 173, 177-186 (1993
9. Koptyug, I. V., Goloshevsky, A. G., Zavarine, I. S., Turro, N. J. & Krusic, P. J. CIDEP studies of fullerene-derived radical adducts. J. Phys. Chem. A 104, 5726-5731 (2000
10. Oxborrow, M., Breeze, J. D. & Alford, N. M. Room-temperature solid-state maser. Nature 488, 353-356 (2012
11. Jelezko, F. & Wrachtrup, J. Single defect centres in diamond: A review. Phys. Status Solidi a 203, 3207-3225 (2006
12. Harrison, J., Sellars, M. J. & Manson, N. B. Optical spin polarization of the N-V centre in diamond. J. Lumin. 107, 245-248 (2004
13. Baranov, P. et al. Silicon vacancy in SiC as a promising quantum system for single-defect and single-photon spectroscopy. Phys. Rev. B 83, 125203 (2011
14. Koehl, W. F., Buckley, B. B., Heremans, F. J., Calusine, G. & Awschalom, D. D. Room temperature coherent control of defect spin qubits in silicon carbide. Nature 479, 84-87 (2011
15. Riedel, D. et al. Resonant addressing and manipulation of silicon vacancy qubits in silicon carbide. Phys. Rev. Lett. 109, 226402 (2012
16. Fuchs, F. et al. Silicon carbide light-emitting diode as a prospective room temperature source for single photons. Sci. Rep. 3, 1637 (2013
17. Soltamov, V., Soltamova, A., Baranov, P. & Proskuryakov, I. Room temperature coherent spin alignment of silicon vacancies in 4H- and 6H-SiC. Phys. Rev. Lett.108, 226402 (2012
18. Vainer, V. S.&Il'in, V. A. Electron spin resonance of exchange-coupled vacancy pairs in hexagonal silicon carbide. Sov. Phys. Solid State 23, 2126-2133 (1981
19. Sörman, E. et al. Silicon vacancy related defect in 4H and 6H SiC. Phys. Rev. B 61, 2613-2620 (2000
20. Wagner, M. et al. Electronic structure of the neutral silicon vacancy in 4H and 6H SiC. Phys. Rev. B 62, 16555-16560 (2000
21. Orlinski, S., Schmidt, J., Mokhov, E. & Baranov, P. Silicon and carbon vacancies in neutron-irradiated SiC: A high-field electron paramagnetic resonance study. Phys. Rev. B 67, 125207 (2003
22. Wimbauer, T., Meyer, B., Hofstaetter, A., Scharmann, A. & Overhof, H. Negatively charged Si vacancy in 4H SiC: A comparison between theory and experiment. Phys. Rev. B 56, 7384-7388 (1997
23. Mizuochi, N. et al. Continuous-wave and pulsed EPR study of the negatively charged silicon vacancy with SD3=2 and C3v symmetry in n-type 4H-SiC. Phys. Rev. B 66, 235202 (2002
24. Falk, A. L. et al. Polytype control of spin qubits in silicon carbide. Nature Commun. 4, 1819 (2013
25. Nizovtsev, A. P. et al. Spin-selective low temperature spectroscopy on single molecules with a triplet-triplet optical transition: Application to the NV defect centre in diamond. Opt. Spectrosc. 94, 848-858 (2003
26. von Bardeleben, H., Cantin, J., Vickridge, I. & Battistig, G. Proton-implantation-induced defects in n-type 6H- and 4H-SiC: An electron paramagnetic resonance study. Phys. Rev. B 62, 10126-10134 (2000
27. De Ceuster, J., Goovaerts, E., Bouwen, A. & Dyakonov, V. Recombination of triplet excitons and polaron pairs in a derived paraphenylene vinylene pentamer. Phys. Rev. B 68, 125202 (2003
28. Baranov, P. G., Romanov, N. G., Khramtsov, V. A. & Vikhnin, V. S. Oriented silver chloride microcrystals and nanocrystals embedded in a crystalline KCl matrix, as studied by means of electron paramagnetic resonance and optically detected magnetic resonance. J. Phys. Condens. Matter 13, 2651-2669 (2001
29. Hughes, V. & Geiger, J. Two-quantum transitions in the microwave Zeeman spectrum of atomic oxygen. Phys. Rev. 99, 1842-1845 (1955
30. Fuchs, G. et al. Excited-state spectroscopy using single spin manipulation in diamond. Phys. Rev. Lett. 101, 117601 (2008
31. Kornienko, L. S. & Shteinshleiger, V. B. Quantum amplifiers and their application in space research. Sov. Phys. Usp. 21, 852-864 (1978
32. Baranov, P. G. et al. EPR identification of the triplet ground state and photoinduced population inversion for a Si-C divacancy in silicon carbide. J. Exp. Theor. Phys. Lett. 82, 441-443 (2005