-
1
-
-
81455139441
-
A 95% efficient normally-off GaN-on-Si HEMT hybrid-IC boost-converter with 425-W output power at 1 MHz
-
Oct.
-
B. Hughes, Y. Yoon, D. Zehnder, and K. Boutros, "A 95% efficient normally-off GaN-on-Si HEMT hybrid-IC boost-converter with 425-W output power at 1 MHz," in Proc. IEEE Compound Semicond. Integr. Circuit Symp., Oct. 2011, pp. 1-3.
-
(2011)
Proc. IEEE Compound Semicond. Integr. Circuit Symp.
, pp. 1-3
-
-
Hughes, B.1
Yoon, Y.2
Zehnder, D.3
Boutros, K.4
-
2
-
-
84860191588
-
Gallium nitride based 3D integrated non-isolated point of load module
-
Feb.
-
D. Reusch, D. Gilham, Y. Su, and F. Lee, "Gallium nitride based 3D integrated non-isolated point of load module," in Proc. IEEE 27th Annu. Appl. Power Electron. Conf. Expo., Feb. 2012, pp. 38-45.
-
(2012)
Proc. IEEE 27th Annu. Appl. Power Electron. Conf. Expo.
, pp. 38-45
-
-
Reusch, D.1
Gilham, D.2
Su, Y.3
Lee, F.4
-
3
-
-
79955765518
-
GaN-FET based dual active bridge DC-DC converter
-
Mar.
-
D. Costinett, H. Nguyen, R. Zane, and D. Maksimovic, "GaN-FET based dual active bridge DC-DC converter," in Proc. IEEE 26th Annu. Appl. Power Electron. Conf. Expo., Mar. 2011, pp. 1425-1432.
-
(2011)
Proc. IEEE 26th Annu. Appl. Power Electron. Conf. Expo.
, pp. 1425-1432
-
-
Costinett, D.1
Nguyen, H.2
Zane, R.3
Maksimovic, D.4
-
4
-
-
84860158347
-
Optimization of the drive circuit for enhancement mode power GaN FETs in DC-DC converters
-
Feb.
-
Y. Xi, M. Chen, K. Nielson, and R. Bell, "Optimization of the drive circuit for enhancement mode power GaN FETs in DC-DC converters," in Proc. IEEE 27th Annu. Appl. Power Electron. Conf. Expo., Feb. 2012, pp. 2467-2471.
-
(2012)
Proc. IEEE 27th Annu. Appl. Power Electron. Conf. Expo.
, pp. 2467-2471
-
-
Xi, Y.1
Chen, M.2
Nielson, K.3
Bell, R.4
-
5
-
-
42449089792
-
Design considerations for very high frequency dc-dc converters
-
Jun.
-
J. Rivas, D. Jackson, O. Leitermann, A. Sagneri, Y. Han, and D. Perreault, "Design considerations for very high frequency dc-dc converters," in Proc. IEEE 37th Power Electron. Spec. Conf., Jun. 2006, pp. 1-11.
-
(2006)
Proc. IEEE 37th Power Electron. Spec. Conf.
, pp. 1-11
-
-
Rivas, J.1
Jackson, D.2
Leitermann, O.3
Sagneri, A.4
Han, Y.5
Perreault, D.6
-
6
-
-
85008020492
-
Very-high-frequency resonant boost converters
-
Jun.
-
R. Pilawa-Podgurski, A. Sagneri, J. Rivas, D. Anderson, and D. Perreault, "Very-high-frequency resonant boost converters," IEEE Trans. Power Electron., vol. 24, no. 6, pp. 1654-1665, Jun. 2009.
-
(2009)
IEEE Trans. Power Electron
, vol.24
, Issue.6
, pp. 1654-1665
-
-
Pilawa-Podgurski, R.1
Sagneri, A.2
Rivas, J.3
Anderson, D.4
Perreault, D.5
-
7
-
-
36148978223
-
Comparison of GaN HEMTs on diamond and SiC substrates
-
DOI 10.1109/LED.2007.908490
-
J. Felbinger, M. Chandra, Y. Sun, L. Eastman, J. Wasserbauer, F. Faili, D. Babic, D. Francis, and F. Ejeckam, "Comparison of GaN HEMTs on diamond and SiC substrates," IEEE Electron Device Lett., vol. 28, no. 11, pp. 948-950, Nov. 2007. (Pubitemid 350111779)
-
(2007)
IEEE Electron Device Letters
, vol.28
, Issue.11
, pp. 948-950
-
-
Felbinger, J.G.1
Chandra, M.V.S.2
Sun, Y.3
Eastman, L.F.4
Wasserbauer, J.5
Faili, F.6
Babic, D.7
Francis, D.8
Ejeckam, F.9
-
8
-
-
78449298021
-
GaN HEMT PA with over 84 added efficiency
-
Nov. 11
-
M. Roberg, J. Hoversten, and Z. Popovíc, "GaN HEMT PA with over 84 added efficiency," Electron. Lett., vol. 46, no. 23, pp. 1553-1554, Nov. 11, 2010.
-
(2010)
Electron. Lett.
, vol.46
, Issue.23
, pp. 1553-1554
-
-
Roberg, M.1
Hoversten, J.2
Popovíc, Z.3
-
9
-
-
84861795573
-
A review of GaN on SiC high electron-mobility power transistors and MMICs
-
Jun.
-
R. Pengelly, S.Wood, J. Milligan, S. Sheppard, andW. Pribble, "A review of GaN on SiC high electron-mobility power transistors and MMICs," IEEE Trans. Microw. Theory Tech., vol. 60, no. 6, pp. 1764-1783, Jun. 2012.
-
(2012)
IEEE Trans. Microw. Theory Tech.
, vol.60
, Issue.6
, pp. 1764-1783
-
-
Pengelly, R.1
Wood, S.2
Milligan, J.3
Sheppard, S.4
Pribble, W.5
-
10
-
-
84870955780
-
High frequency high power density 3D integrated Gallium Nitride based point-of-load module
-
Sep.
-
S. Ji, D. Reusch, and F. Lee, "High frequency high power density 3D integrated Gallium Nitride based point-of-load module," in Proc. IEEE Energy Convers. Congr. Expo., Sep. 2012, pp. 4267-4273.
-
(2012)
Proc. IEEE Energy Convers. Congr. Expo.
, pp. 4267-4273
-
-
Ji, S.1
Reusch, D.2
Lee, F.3
-
11
-
-
84868530821
-
GaN power electronics for automotive application
-
May
-
K. Boutros, R. Chu, and B. Hughes, "GaN power electronics for automotive application," in Proc. IEEE Energytech, May 2012, pp. 1-4.
-
(2012)
Proc. IEEE Energytech
, pp. 1-4
-
-
Boutros, K.1
Chu, R.2
Hughes, B.3
-
12
-
-
80052340692
-
Over 10MHz bandwidth envelope-tracking DC/DC converter for flexible high power GaN amplifiers
-
Jun.
-
N. Le Gallou, D. Sardin, C. Delepaut, M. Campovecchio, and S. Rochette, "Over 10MHz bandwidth envelope-tracking DC/DC converter for flexible high power GaN amplifiers," in Proc. IEEE MTT-S Int. Microw. Symp. Dig., Jun. 2011, pp. 1-4.
-
(2011)
Proc. IEEE MTT-S Int. Microw. Symp. Dig.
, pp. 1-4
-
-
Le Gallou, N.1
Sardin, D.2
Delepaut, C.3
Campovecchio, M.4
Rochette, S.5
-
13
-
-
81855209820
-
Optimum design of an envelope tracking buck converter for RFPA using GaN HEMTs
-
Sep.
-
D. Cucak, M. Vasic, O. Garcia, J. Oliver, P. Alou, and J. Cobos, "Optimum design of an envelope tracking buck converter for RFPA using GaN HEMTs," in Proc. IEEE Energy Convers. Congr. Expo., Sep. 2011, pp. 1210-1216.
-
(2011)
Proc. IEEE Energy Convers. Congr. Expo.
, pp. 1210-1216
-
-
Cucak, D.1
Vasic, M.2
Garcia, O.3
Oliver, J.4
Alou, P.5
Cobos, J.6
-
14
-
-
0001473741
-
AlGaN/GaN HEMTs - An overview of device operation and applications
-
DOI 10.1109/JPROC.2002.1021567, PII S0018921902055822
-
U. Mishra, P. Parikh, and Y.-F.Wu, "AlGaN/GaN HEMTs-an overview of device operation and applications," Proc. IEEE, vol. 90, no. 6, pp. 1022-1031, Jun. 2002. (Pubitemid 43779259)
-
(2002)
Proceedings of the IEEE
, vol.90
, Issue.6
, pp. 1022-1031
-
-
Mishra, U.K.1
Parikh, P.2
Wu, Y.-F.3
-
15
-
-
80053465846
-
-
Triquint Jun. [Online]. Available
-
Triquint. (2011, Jun.) High-Power/High-Performance Gallium Nitride. [Online]. Available: http://www.triquint.com/prodserv/foundry/GaN.cfm
-
(2011)
High-Power/High-Performance Gallium Nitride
-
-
-
16
-
-
50949107930
-
Process and technology-independent power switching transistor figures of merit
-
Jan.
-
E. McCune, "Process and technology-independent power switching transistor figures of merit," in Proc. IEEE Radio Wireless Symp., Jan. 2008, pp. 195-198.
-
(2008)
Proc. IEEE Radio Wireless Symp.
, pp. 195-198
-
-
McCune, E.1
-
17
-
-
79955765518
-
GaN-FET based dual active bridge DC-DC converter
-
Mar.
-
D. Costinett, H. Nguyen, R. Zane, and D. Maksimovic, "GaN-FET based dual active bridge DC-DC converter," in Proc. IEEE 26th Annu. Appl. Power Electron. Conf. Expo., Mar. 2011, pp. 1425-1432.
-
(2011)
Proc. IEEE 26th Annu. Appl. Power Electron. Conf. Expo.
, pp. 1425-1432
-
-
Costinett, D.1
Nguyen, H.2
Zane, R.3
Maksimovic, D.4
-
18
-
-
0027816619
-
Design of the zero-voltage-switching quasi-square-wave resonant switch
-
Jun.
-
D. Maksimovic, "Design of the zero-voltage-switching quasi-square-wave resonant switch," in Proc. IEEE 24th Annu. Power Electron. Spec. Conf., Jun. 1993, pp. 323-329.
-
(1993)
Proc. IEEE 24th Annu. Power Electron. Spec. Conf.
, pp. 323-329
-
-
Maksimovic, D.1
-
19
-
-
84891138074
-
-
Altera Sep. [Online]. Available
-
Altera. (2012, Sep.) Transceiver Overview: Stratix IV and Hard-Copy IV. [Online]. Available: http://www.altera.com/devices/fpga/stratixfpgas/stratix-iv/ transceiver s/stxiv-transceivers.html
-
(2012)
Transceiver Overview: Stratix IV and Hard-Copy IV.
-
-
-
20
-
-
0026255002
-
FastCap: A multipole accelerated 3-D capacitance extraction program
-
Nov.
-
K. Nabors and J. White, "FastCap: A multipole accelerated 3-D capacitance extraction program," IEEE Trans. Comput.-Aided Design Integr. Circuits Syst., vol. 10, no. 11, pp. 1447-1459, Nov. 1991.
-
(1991)
IEEE Trans. Comput.-Aided Design Integr. Circuits Syst.
, vol.10
, Issue.11
, pp. 1447-1459
-
-
Nabors, K.1
White, J.2
-
21
-
-
33847695402
-
An improved power-added efficiency 19-dBm hybrid envelope elimination and restoration power amplifier for 802.11g WLAN applications
-
Dec.
-
F. Wang, D. Kimball, J. Popp, A. Yang, D. Lie, P. Asbeck, and L. Larson, "An improved power-added efficiency 19-dBm hybrid envelope elimination and restoration power amplifier for 802.11g WLAN applications," IEEE Trans. Microw. Theory Tech., vol. 54, no. 12, pp. 4086-4099, Dec. 2006.
-
(2006)
IEEE Trans. Microw. Theory Tech.
, vol.54
, Issue.12
, pp. 4086-4099
-
-
Wang, F.1
Kimball, D.2
Popp, J.3
Yang, A.4
Lie, D.5
Asbeck, P.6
Larson, L.7
-
22
-
-
34548721862
-
Efficiency optimization in linear-assisted switching power converters for envelope tracking in RF power amplifiers
-
May
-
V. Yousefzadeh, E. Alarcon, and D.Maksimovic, "Efficiency optimization in linear-assisted switching power converters for envelope tracking in RF power amplifiers," in Proc. IEEE Int. Symp. Circuits Syst., May 2005, vol. 2, pp. 1302-1305.
-
(2005)
Proc. IEEE Int. Symp. Circuits Syst.
, vol.2
, pp. 1302-1305
-
-
Yousefzadeh, V.1
Alarcon, E.2
Maksimovic, D.3
-
23
-
-
84860179763
-
10 MHz large signal bandwidth, 95% efficient power supply for 3G-4G cell phone base stations
-
Feb.
-
M. Norris and D. Maksimovic, "10 MHz large signal bandwidth, 95% efficient power supply for 3G-4G cell phone base stations," in Proc. IEEE 27th Annu. Appl. Power Electron. Conf. Expo., Feb. 2012, pp. 7-13.
-
(2012)
Proc. IEEE 27th Annu. Appl. Power Electron. Conf. Expo.
, pp. 7-13
-
-
Norris, M.1
Maksimovic, D.2
-
24
-
-
84881100536
-
Analysis and design of the output filter for buck envelope amplifiers
-
Jan.
-
J. Sebastían, P. Ferńandez, A. Rodŕ?guez, and M. Rodŕ?guez, "Analysis and design of the output filter for buck envelope amplifiers," IEEE Trans. Power Electron., vol. 29, no. 1, pp. 213-233, Jan. 2014.
-
(2014)
IEEE Trans. Power Electron
, vol.29
, Issue.1
, pp. 213-233
-
-
Sebastían, J.1
Ferńandez, P.2
Rodŕguez, A.3
Rodŕguez, M.4
-
25
-
-
33644907456
-
Analytical loss model of power MOSFET
-
DOI 10.1109/TPEL.2005.869743
-
Y. Ren, M. Xu, J. Zhou, and F. Lee, "Analytical loss model of power MOSFET," IEEE Trans. Power Electron., vol. 21, no. 2, pp. 310-319, Mar. 2006. (Pubitemid 43380079)
-
(2006)
IEEE Transactions on Power Electronics
, vol.21
, Issue.2
, pp. 310-319
-
-
Ren, Y.1
Xu, M.2
Zhou, J.3
Lee, F.C.4
-
26
-
-
77953240162
-
An insight into the switching process of power MOSFETs: An improved analytical losses model
-
Jun.
-
M. Rodŕ?guez, A. Rodŕ?guez, P. Miaja, D. Lamar, and J. Sebastían, "An insight into the switching process of power MOSFETs: An improved analytical losses model," IEEE Trans. Power Electron., vol. 25, no. 6, pp. 1626-1640, Jun. 2010.
-
(2010)
IEEE Trans. Power Electron
, vol.25
, Issue.6
, pp. 1626-1640
-
-
Rodŕguez, M.1
|