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Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC

Volumn , Issue , 2012, Pages 2467-2471

Optimization of the drive circuit for enhancement mode power GaN FETs in DC-DC converters

(4) Xi, Youhao a Chen, Min a Nielson, Kim a Bell, Robert a

a TEXAS INSTRUMENTS (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DRIVE CIRCUITS; ENHANCEMENT MODES; GATE DRIVE CIRCUITS; GATE SIGNALS; GATE VOLTAGES; LOW IMPEDANCE; NOISE IMMUNITY; POWER TRANSISTORS; PROOF OF CONCEPT; PROTOTYPE CONVERTER; ULTRA-LOW THRESHOLD;

DC-DC CONVERTERS; EXHIBITIONS; GALLIUM NITRIDE; MESFET DEVICES; OPTIMIZATION;

POWER ELECTRONICS;

EID: 84860158347 PISSN: None EISSN: None Source Type: Conference Proceeding
DOI: 10.1109/APEC.2012.6166168 Document Type: Conference Paper

Times cited : (57)

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12
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.