Process- and technology-independent power switching transistor figures of merit

2008 IEEE Radio and Wireless Symposium, RWS

Volumn , Issue , 2008, Pages 195-198

  McCune, Earl ^a  

^a NONE

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; COMPUTER NETWORKS; EFFICIENCY; ELECTRIC SWITCHGEAR; ENERGY EFFICIENCY; MESFET DEVICES; POWER AMPLIFIERS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR SWITCHES; SILICON;

FIGURES OF MERIT; HIGH SPEEDS; POWER SWITCHING;

SWITCHES;

EID: 50949107930     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RWS.2008.4463462     Document Type: Conference Paper

References (7)

1. R.J.E. Heuting, et al., "Switching performance of low-voltage N-channel trench MOSFETs," Proceedings of the 14th International Symposium on Power Semiconductor Devices and ICs, 2002, pp. 177-180
2. L. Ma, et al., "New trench MOSFET technology for DC-DC converter applications," Proceedings of the 2003 IEEE Int'l Symp. on Power Semiconductor Devices and ICs, April 2003, pp. 354-357
3. H.W. Ruegg, "An Integrated FET Analog Switch," Proceedings of the IEEE, Dec. 1964, pp. 1572-1576
4. Peake, S.T., et al., "A novel high side FET with reduced switching losses," Proceedings of the 2003 IEEE Int'l Symp. on Power Semiconductor Devices and ICs, April 2003, pp. 362-365
5. R. J. Gutmann, D. J. Fryklund, "Characterization of Linear and Nonlinear Properties of GaAs MESFET's for Broad-Band Control Applications," Trans. On Microwave Theory and Techniques, May 1987, pp. 516-521
6. D. Chang, et al., "Power junction FETs (JFETs) for very low-voltage applications," Proceedings of the IEEE Applied Power Electronics Conference, Mar. 2005, vol. 3, pp. 1419-1423
7. D.E. Root, "Nonlinear charge modeling for FET large-signal simulation and its importance for IP3 and ACPR in communication circuits," Proceedings of the IEEE 2001 Midwest Symposium on Circuits and Systems, Vol. 2, Aug. 2001, pp. 768-772