GaN HEMT PA with over 84 power added efficiency

Electronics Letters

Volumn 46, Issue 23, 2010, Pages 1553-1554

  Roberg, M ^a   Hoversten, J ^a   Popovic Z ^a  

^a UCB 450   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CDMA DOWNLINK; CLASS-F; DESIGN APPROACHES; DESIGN FREQUENCIES; DESIGN PROCEDURE; FUNDAMENTAL FREQUENCIES; GAN HEMTS; HARMONIC TERMINATION; IMPEDANCE TRANSFORMATION; LOAD IMPEDANCE; MEASUREMENT-BASED; OUTPUT MATCHING CIRCUITS; OUTPUT POWER; POWER-ADDED EFFICIENCY; S -PARAMETERS; THIRD HARMONIC;

GALLIUM ALLOYS; GALLIUM NITRIDE; SCATTERING PARAMETERS;

DESIGN;

EID: 78449298021     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el.2010.2776     Document Type: Article

References (6)

1. Milligan, J.W.: et al. ' SiC and GaN wide bandgap device technology overview ', IEEE Radar Conf., Boston, MA, USA, 2007, p. 960-964
2. Hoversten, J., Roberg, M., and Popovic, Z.: ' Harmonic load pull of high-power microwave devices using fundamental-only load pull tuners ', ARFTG Microwave Measurement Symp. Dig., Anaheim, CA, USA, May, 2010, p. 1-4
3. Schmelzer, D.: et al. ' A GaN HEMT class F amplifier at 2GHz with greater than 80 PAE ', IEEE J. Solid-State Circuits, 2007, 42, (10), p. 2130-2136 0018-9200
4. Pribble, W.L.: et al. ' High efficiency class-E amplifier using GaN HEMT technology ', IEEE Radio and Wireless Symp., San Diego, CA, USA, January, 2006
5. TriQuint Semiconductor, 'TGF2023-02 Datasheet', online, accessed 6/03/10, Nov 2009, www.triquint.com/prodserv/more-info/proddisp.aspx?prod-id=TGF2023-02
6. Lopez, N.D.: et al. ' Design method for UHF class-E power amplifiers ', IEEE Annual Compound Semiconductor Integrated Circuit Symp., Greensboro, NC, USA, October, 2009, p. 1-4