-
1
-
-
33749525438
-
SiC JFET dc characteristics under extremely high ambient temperatures
-
T. Funaki, J. C. Balda, J. Junghans, A. A. Kashyap, F. D. Barlow, H. A. Mantooth, T. Kimoto, and T. Hikihara, "SiC JFET dc characteristics under extremely high ambient temperatures," Inst. Electron., Inform. Commun. Eng. Electron. Exp., vol. 1, no. 17, pp. 523-527, 2004.
-
(2004)
Inst. Electron., Inform. Commun. Eng. Electron. Exp.
, vol.1
, Issue.17
, pp. 523-527
-
-
Funaki, T.1
Balda, J.C.2
Junghans, J.3
Kashyap, A.A.4
Barlow, F.D.5
Mantooth, H.A.6
Kimoto, T.7
Hikihara, T.8
-
2
-
-
84878217800
-
Performance and reliability characteristics of 1200V, 100 A, 200 ?C half-bridge SiC MOSFET-JBS diode power module
-
presented at
-
J. D. Scofield, J. N. Merrett, J. Richmond, A. Agarwal, and S. Leslie, "Performance and reliability characteristics of 1200V, 100 A, 200 ?C half-bridge SiC MOSFET-JBS diode power module," presented at Int. Conf. High Temperature Electron., Albuquerque, NM, USA, 2010.
-
(2010)
Int. Conf. High Temperature Electron., Albuquerque, NM, USA
-
-
Scofield, J.D.1
Merrett, J.N.2
Richmond, J.3
Agarwal, A.4
Leslie, S.5
-
3
-
-
77955438463
-
-
K. Matocha, P. A. Losee, A. Gowda, El. Delgado, G. Dunne, R. Beaupre, and L. Stevanovic, Mater. Sci. Forum, vol. 645-648, pp. 1123-1126, 2010.
-
(2010)
Forum
, vol.645-648
, pp. 1123-1126
-
-
Matocha, K.1
Losee, P.A.2
Gowda, A.3
Delgado, El.4
Dunne, G.5
Beaupre, R.6
Stevanovic, L.7
-
4
-
-
84866495917
-
A high-temperature SiC three-phase AC-DC converter design for 100 ?C ambient temperature
-
Jan.
-
R. Wang, D. Boroyevich, P. Ning, Z. Wang, F. Wang, P. Mattavelli, K. D. T. Ngo, and K. Rajashekara, "A high-temperature SiC three-phase AC-DC converter design for 100 ?C ambient temperature," IEEE Trans. Power Electron., vol. 28, no. 1, pp. 555-572, Jan. 2013.
-
(2013)
IEEE Trans. Power Electron
, vol.28
, Issue.1
, pp. 555-572
-
-
Wang, R.1
Boroyevich, D.2
Ning, P.3
Wang, Z.4
Wang, F.5
Mattavelli, P.6
Ngo, K.D.T.7
Rajashekara, K.8
-
5
-
-
11244292142
-
Silicon-carbide (SiC) semiconductor power electronics for extreme high-temperature environments
-
1132, 2004 IEEE Aerospace Conference Proceedings
-
J. Hornberger, A. B. Lostetter, K. J. Olejniczak, T. McNutt, S. Magan Lal, and A. Mantooth, "Silicon-carbide SiC semiconductor power electronics for extreme high temperature environments," in Proc. IEEE Aerosp. Conf., 2004, vol. 4, pp. 2538-2555. (Pubitemid 40057252)
-
(2004)
IEEE Aerospace Conference Proceedings
, vol.4
, pp. 2538-2555
-
-
Hornberger, J.1
Lostetter, A.B.2
Olejniczak, K.J.3
McNutt, T.4
Lal, S.M.5
Mantooth, A.6
-
6
-
-
77954149949
-
A novel high-temperature planar package for SiC multichip phase-leg power module
-
Aug.
-
P. Ning, T. Guangyin Lei, F. Wang, G.-Q. Lu, K. D. T. Ngo, and K. Rajashekara, "A novel high-temperature planar package for SiC multichip phase-leg power module," IEEE Trans. Power Electron., vol. 25, no. 8, pp. 2059-2067, Aug. 2010.
-
(2010)
IEEE Trans. Power Electron
, vol.25
, Issue.8
, pp. 2059-2067
-
-
Ning, P.1
Guangyin Lei, T.2
Wang, F.3
Lu, G.-Q.4
Ngo, K.D.T.5
Rajashekara, K.6
-
7
-
-
84867796658
-
Development of a SiC JFET-based sixpack power module for a fully integrated inverter
-
Mar.
-
F.Xu, T. J. Han, D. Jiang, L. M. Tolbert, F.Wang, J. Nagashima, S. J. Kim, S. Kulkarni, and F. Barlow, "Development of a SiC JFET-based sixpack power module for a fully integrated inverter," IEEE Trans. Power Electron., vol. 28, no. 3, pp. 1464-1478, Mar. 2013.
-
(2013)
IEEE Trans. Power Electron
, vol.28
, Issue.3
, pp. 1464-1478
-
-
Xu, F.1
Han, T.J.2
Jiang, D.3
Tolbert, L.M.4
Wang, F.5
Nagashima, J.6
Kim, S.J.7
Kulkarni, S.8
Barlow, F.9
-
8
-
-
52349103016
-
Development of an extreme temperature range silicon carbide power module for aerospace applications
-
D. C.Katsis andY. Zheng, "Development of an extreme temperature range silicon carbide power module for aerospace applications," in Proc. IEEE Power Electron. Spec. Conf., 2008, pp. 290-294.
-
(2008)
Proc. IEEE Power Electron. Spec. Conf.
, pp. 290-294
-
-
Katsis, D.C.1
Zheng, Y.2
-
9
-
-
77955196771
-
Characterization of encapsulants for high-voltage, high temperature power electronic packaging
-
Jun.
-
Y. Yao, Z. Chen, G. Lu, D. Boroyevich, and K. D. T Ngo, "Characterization of encapsulants for high-voltage, high temperature power electronic packaging," in Proc. Electron. Compon. Technol. Conf., Las Vegas, NV, USA, Jun. 2010, pp. 1834-1840.
-
(2010)
Proc. Electron. Compon. Technol. Conf., Las Vegas, NV, USA
, pp. 1834-1840
-
-
Yao, Y.1
Chen, Z.2
Lu, G.3
Boroyevich, D.4
Ngo, K.D.T.5
-
10
-
-
84874156046
-
New generation of Silicone gels for power devices encapsulation
-
Nuremberg, Germany, May
-
E. Vanlathem, H. Enami, and D. S. Hyun, "New generation of Silicone gels for power devices encapsulation," in Proc. Power Electron., Intell. Motion, Renewable Energy EnergyManage. Conf., Nuremberg, Germany, May 8-10, 2012, pp. 686-693.
-
(2012)
Proc. Power Electron., Intell. Motion, Renewable Energy EnergyManage. Conf.
, vol.8-10
, pp. 686-693
-
-
Vanlathem, E.1
Enami, H.2
Hyun, D.S.3
-
12
-
-
84987266075
-
A statistical distribution of wide applicability
-
W. Weibull, "A statistical distribution of wide applicability," J. Appl. Mech., vol. 18, pp. 293-297, 1951.
-
(1951)
J. Appl. Mech.
, vol.18
, pp. 293-297
-
-
Weibull, W.1
-
13
-
-
0025442738
-
Estimating the cumulative probability of failure data points to be plotted on Weibull and other probability paper
-
DOI 10.1109/14.55721
-
J. C. Fothergill, "Estimating the cumulative probability of failure data points to be plotted on Weibull and other probability paper," IEEE Trans. Electr. Insulation, vol. 25, no. 3, pp. 489-492, Jun. 1990. (Pubitemid 20737572)
-
(1990)
IEEE transactions on electrical insulation
, vol.25
, Issue.3
, pp. 489-492
-
-
Fothergill, J.C.1
-
14
-
-
0022072659
-
Studies of cyclic and linear poly(dimethylsiloxanes): 19. Glass transition temperatures and crystallization behaviour
-
DOI 10.1016/0032-3861(85)90140-5
-
S. J. Clarson, K. Dodgson, and J. A. Semlyen, "Studies of cyclic and linear poly(dimethylsiloxane): 19 Glass transition temperatures and crystallization behaviour," Polymer, vol. 26, pp. 930-934, 1985. (Pubitemid 16459336)
-
(1985)
Polymer
, vol.26
, Issue.6
, pp. 930-934
-
-
Clarkson, S.J.1
Dodgson, K.2
Semlyen, J.A.3
-
15
-
-
0023042169
-
Dielectric properties of an epoxy resin and its composite. I: Moisture effects on dipole relaxation
-
J. D. Reid and W. H. Lawrence, "Dielectric properties of an epoxy resin and its composite. I: Moisture effects on dipole relaxation," J. Appl. Polymer Sci., vol. 31, pp. 1771-1784, 1986.
-
(1986)
J. Appl. Polymer Sci.
, vol.31
, pp. 1771-1784
-
-
Reid, J.D.1
Lawrence, W.H.2
-
16
-
-
84893150635
-
Etude des Propríet́es Electriques des Elastom̀eres Silicones Utiliśes pour l'Isolation Electrique
-
France
-
D. H. Nguyen, "Etude des Propríet́es Electriques des Elastom̀eres Silicones Utiliśes pour l'Isolation Electrique," Th̀ese de Doctorat de l, Universit ́e Joseph Fourier, Grenoble I, France, 2005.
-
(2005)
Th̀ese de Doctorat de L, Universit ́e Joseph Fourier, Grenoble i
-
-
Nguyen, D.H.1
-
18
-
-
58049126577
-
Breakdown field in silicone gel under needle-plane geometry
-
presented at Yokkaichi, Japan Sep.
-
M. T. Do, J.-L. Auǵe, and O. Lesaint, "Breakdown field in silicone gel under needle-plane geometry," presented at Int. Symp. Electr. Insulating Mater., Yokkaichi, Japan, Sep. 2008.
-
(2008)
Int. Symp. Electr. Insulating Mater
-
-
Do, M.T.1
Auǵe, J.-L.2
Lesaint, O.3
-
19
-
-
79958294203
-
Assessment of encapsulants for high-voltage, high-temperature power electronic packaging
-
Y. Yao, G.-Q. Lu, Z. Chen, D. Boroyevich, and K. D. T Ngo, "Assessment of encapsulants for high-voltage, high-temperature power electronic packaging," in Proc. Elect. Ship Technol. Symp., 2011, pp. 258-264.
-
(2011)
Proc. Elect. Ship Technol. Symp.
, pp. 258-264
-
-
Yao, Y.1
Lu, G.-Q.2
Chen, Z.3
Boroyevich, D.4
Ngo, K.D.T.5
-
20
-
-
0022450633
-
Studies of cyclic and linear poly(dimethylsiloxanes): 21. High temperature thermal behaviour
-
DOI 10.1016/0032-3861(86)90360-5
-
S. J. Clarson and J. A. Semlyen, "Studies of cyclic and linear poly(dimethylsiloxanes): 21. High temperature thermal behaviour," Polymer, vol. 27, no. 1, pp. 91-95, Jan. 1986. (Pubitemid 16488215)
-
(1986)
Polymer
, vol.27
, Issue.1
, pp. 91-95
-
-
Clarson, S.J.1
Semlyen, J.A.2
-
21
-
-
77749340354
-
Thickness and elastic modulus of plasma treated PDMS Silica-like surface layer
-
S. Befahy, P. Lipnik, T. Pardoen, C. Nascimento, B. Patris, P. Bertrand, and S. Yunus, "Thickness and elastic modulus of plasma treated PDMS Silica-like surface layer," Langmuir, vol. 26, no. 5, pp. 3372-3375, 2010.
-
(2010)
Langmuir
, vol.26
, Issue.5
, pp. 3372-3375
-
-
Befahy, S.1
Lipnik, P.2
Pardoen, T.3
Nascimento, C.4
Patris, B.5
Bertrand, P.6
Yunus, S.7
-
22
-
-
79955852412
-
Thermal fracture of oxidized polydimethylsiloxane during soft lithography of nanopost arrays
-
W. Tooley, S. Feghhi, S. J. Han, J. Wang, and N. J. Sniadecki, "Thermal fracture of oxidized polydimethylsiloxane during soft lithography of nanopost arrays," J. Micromech. Microeng., vol. 21, pp. 054013-1-054013-9, 2011.
-
(2011)
J. Micromech. Microeng.
, vol.21
, pp. 0540131-0540139
-
-
Tooley, W.1
Feghhi, S.2
Han, S.J.3
Wang, J.4
Sniadecki, N.J.5
|