Performance and reliability of SiC MOSFETs for high-current power modules

Materials Science Forum

Volumn 645-648, Issue , 2010, Pages 1123-1126

  Matocha, Kevin ^a   Losee, Pete ^a   Gowda, Arun ^a   Delgado, Eladio ^a   Dunne, Greg ^a   Beaupre, Rich ^a   Stevanovic, Ljubisa ^a  

^a GE GLOBAL RESEARCH   (United States)

Author keywords

Modules; MOSFETs; Packaging; Reliability; Time dependent dielectric breakdown

Indexed keywords

DIELECTRIC MATERIALS; ELECTRIC FIELDS; GATES (TRANSISTOR); PACKAGING; RELIABILITY; SILICON CARBIDE;

GATE OXIDE RELIABILITY; MODULES; MOSFETS; PACKAGING TECHNIQUES; PERFORMANCE AND RELIABILITIES; POWER CONVERSION SYSTEMS; SPECIFIC-ON RESISTANCE; TIME DEPENDENT DIELECTRIC BREAKDOWN;

POWER MOSFET;

EID: 77955438463     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.645-648.1123     Document Type: Conference Paper

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