A physics-based model for a SiC JFET device accounting for the mobility dependence on temperature and electric field

Conference Record - IAS Annual Meeting (IEEE Industry Applications Society)

Volumn , Issue , 2008, Pages

  Platania, E ^b   Chen, Z ^a   Chimento, F ^b   Lu, L ^a   Santi, E ^a   Raciti, A ^b   Hudgins, J ^c   Mantooth, A ^d   Sheridan, D ^e   Cassady, J ^e  

^a UNIVERSITY OF SOUTH CAROLINA   (United States)

^b UNIVERSITY OF CATANIA   (Italy)

^c UNIVERSITY OF NEBRASKA LINCOLN   (United States)

^d UNIVERSITY OF ARKANSAS   (United States)

^e SemiSouth Laboratories Inc   (United States)

Author keywords

JFET; Physics based model; Silicon carbide

Indexed keywords

CONDUCTION CURRENTS; CURRENT POWERS; DRIFT VELOCITIES; JFET; MOBILITY MODELS; MODEL EQUATIONS; PHYSICAL MODELS; PHYSICS BASED MODEL; RESISTIVE SWITCHING; STATIC AND DYNAMICS; STATIC CONDITIONS;

ELECTRIC FIELD EFFECTS; ELECTRIC FIELDS; FIELD EFFECT TRANSISTORS; SPICE;

SILICON CARBIDE;

EID: 57949087001     PISSN: 01972618     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/08IAS.2008.364     Document Type: Conference Paper

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