Monte Carlo simulations of phonon transport in nanoporous silicon and germanium

Journal of Applied Physics

Volumn 115, Issue 2, 2014, Pages

  Jean, V ^a   Fumeron, S ^a   Termentzidis, K ^a   Tutashkonko, S ^b   Lacroix, D ^a  

^a UNIVERSITÉ DE LORRAINE   (France)

^b INSTITUT DES NANOTECHNOLOGIES DE LYON   (France)

Author keywords

[No Author keywords available]

Indexed keywords

BOLTZMANN TRANSPORT EQUATION; EFFECTIVE MEDIUM; MEAN FREE PATH; MONTE CARLO TECHNIQUES; NANO-POROUS SILICON; PHONON MEAN FREE PATH; PHONON TRANSPORT; STATISTICAL APPROACH;

GERMANIUM; MONTE CARLO METHODS; POROSITY; SILICON; THERMAL CONDUCTIVITY;

PHONONS;

EID: 84892396675     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4861410     Document Type: Article

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