Scaling laws for thermal conductivity of crystalline nanoporous silicon based on molecular dynamics simulations

Journal of Applied Physics

Volumn 110, Issue 6, 2011, Pages

  Fang, Jin ^a   Pilon, Laurent ^a  

^a Engineering IV   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COHERENT POTENTIAL APPROXIMATION; CRYSTALLINE SILICONS; CYLINDRICAL PORES; EFFECTIVE THERMAL CONDUCTIVITY; INTERATOMIC INTERACTIONS; INTERFACIAL AREA CONCENTRATIONS; MOLECULAR DYNAMICS SIMULATIONS; NANO-POROUS SILICON; NONEQUILIBRIUM MOLECULAR DYNAMICS; PHYSICS-BASED MODELS; PORE DIAMETERS; SIMPLE-CUBIC LATTICES; SPHERICAL PORES; STILLINGER-WEBER POTENTIALS; VACANCY DEFECTS;

COMPUTER SIMULATION; CRYSTALLINE MATERIALS; DYNAMICS; MOLECULAR DYNAMICS; VACANCIES;

THERMAL CONDUCTIVITY;

EID: 80053497355     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3638054     Document Type: Article

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