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Journal of Luminescence

Volumn 148, Issue , 2014, Pages 186-191

High red emission intensity of Eu:Y2O3 films grown on Si(1 0 0)/Si(1 1 1) by electron beam evaporation

(7) Rivera, V A G a Ferri, F A a Clabel H , J L b Pereira Da Silva, M A a,c Nunes, L A O a Li, M Siu a Marega Jr , E a

a UNIVERSITY OF SÃO PAULO (Brazil)

b FEDERAL UNIVERSITY OF SÃO CARLOS (Brazil)

c UNICEP (Brazil)

Author keywords

Materials; Rare earths; Spectroscopy; Thin films

Indexed keywords

CRYSTALLINE STRUCTURE; ELECTRON BEAM EVAPORATION; EMISSION INTENSITY; MAGNETIC DIPOLE TRANSITION; NONRADIATIVE PROCESS; RED PHOTOLUMINESCENCE; STRUCTURAL AND OPTICAL PROPERTIES; VACUUM ENVIRONMENT;

HEAT TREATMENT; MATERIALS; PHYSICAL VAPOR DEPOSITION; SPECTROSCOPY; THIN FILMS;

SILICON;

EID: 84891820266 PISSN: 00222313 EISSN: None Source Type: Journal
DOI: 10.1016/j.jlumin.2013.12.022 Document Type: Article

Times cited : (12)

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