Temperature dependence of the properties of heteroepitaxial Y2O3 films grown on Si by ion assisted evaporation

Journal of Applied Physics

Volumn 86, Issue 1, 1999, Pages 198-204

  Cho, M H ^a   Ko, D H ^a   Jeong, K ^a   Lyo, I W ^a   Whangbo, S W ^a   Kim, H B ^a   Choi, S C ^a,b   Song, J H ^a,b   Cho, S J ^a,c   Whang, C N ^a  

^a Yonsei University   (South Korea)

^b Korea Institute of Science and Technology   (South Korea)

^c Kyungsung University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

EVAPORATION; FILM GROWTH; INTERFACES (MATERIALS); MORPHOLOGY; OXIDE SUPERCONDUCTORS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICON; SUBSTRATES; SURFACE ROUGHNESS; TRANSMISSION ELECTRON MICROSCOPY; X RAY CRYSTALLOGRAPHY;

HETEROEPITAXIAL FILMS; ION ASSISTED EVAPORATIONS;

SUPERCONDUCTING FILMS;

EID: 13044304553     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.370717     Document Type: Article

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