Evidence of phonon-assisted auger recombination and multiple exciton generation in semiconductor quantum dots revealed by temperature-dependent phonon dynamics

Journal of Physical Chemistry Letters

Volumn 5, Issue 1, 2014, Pages 99-105

  Hyeon Deuk, Kim ^a,b   Kobayashi, Yoichi ^c   Tamai, Naoto ^d  

^a KYOTO UNIVERSITY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^c AOYAMA GAKUIN UNIVERSITY   (Japan)

^d KWANSEI GAKUIN UNIVERSITY   (Japan)

Author keywords

Auger dynamics; Auger recombination; electron phonon couplings; multiple exciton generation; quantum dots; temperature dependence

Indexed keywords

AB INITIO SIMULATIONS; AUGER RECOMBINATION; ELECTRON PHONON COUPLINGS; LOGARITHMIC TEMPERATURE; MULTIPLE EXCITON GENERATIONS; SOLAR CELL EFFICIENCIES; TEMPERATURE DEPENDENCE; TEMPERATURE DEPENDENT;

DYNAMICS; ELECTRON CORRELATIONS; ELECTRON-PHONON INTERACTIONS; ELECTRONIC STRUCTURE; EXCITONS; SEMICONDUCTOR QUANTUM DOTS; TEMPERATURE DISTRIBUTION;

AUGERS;

EID: 84891769905     PISSN: None     EISSN: 19487185     Source Type: Journal    
DOI: 10.1021/jz402305r     Document Type: Article

References (50)

1. Nozik, A. J. Spectroscopy and Hot Electron Relaxation Dynamics in Semiconductor Quantum Wells and Quantum Dots Annu. Rev. Phys. Chem. 2001, 52, 193-231
2. McGuire, J. A.; Joo, J.; Pietryga, J. M.; Schaller, R. D.; Klimov, V. I. New Aspects of Carrier Multiplication in Semiconductor Nanocrystals Acc. Chem. Res. 2008, 41, 1810-1819
3. Semonin, O. E.; Luther, J. M.; Choi, S.; Chen, H.-Y.; Gao, J.; Nozik, A. J.; Beard, M. C. Peak External Photocurrent Quantum Efficiency Exceeding 100% via MEG in a Quantum Dot Solar Cell Science 2011, 334, 1530-1533
4. Beard, M. C.; Knutsen, K. P.; Yu, P. R.; Luther, J. M.; Song, Q.; Metzger, W. K.; Ellingson, R. J.; Nozik, A. J. Multiple Exciton Generation in Colloidal Silicon Nanocrystals Nano Lett. 2007, 7, 2506-2512
5. Beard, M. C.; Midgett, A. G.; Hanna, M. C.; Luther, J. M.; Hughes, B. K.; Nozik, A. J. Comparing Multiple Exciton Generation in Quantum Dots to Impact Ionization in Bulk Semiconductors: Implications for Enhancement of Solar Energy Conversion Nano Lett. 2010, 10, 3019-3027
6. Beard, M. C.; Midgett, A. G.; Law, M.; Semonin, O. E.; Ellingson, R. J.; Nozik, A. J. Variations in the Quantum Efficiency of Multiple Exciton Generation for a Series of Chemically Treated PbSe Nanocrystal Films Nano Lett. 2009, 9, 836-845
7. Califano, M. Direct and Inverse Auger Processes in InAs Nanocrystals: Can the Decay Signature of a Trion Be Mistaken for Carrier Multiplication? ACS Nano 2009, 3, 2706-2714
8. Califano, M. Photoinduced Surface Trapping and the Observed Carrier Multiplication Yields in Static CdSe Nanocrystal Samples ACS Nano 2011, 5, 3614-3621
9. Ellingson, R. J.; Beard, M. C.; Johnson, J. C.; Yu, P. R.; Micic, O. I.; Nozik, A. J.; Shabaev, A.; Efros, A. L. Highly Efficient Multiple Exciton Generation in Colloidal PbSe and PbS Quantum Dots Nano Lett. 2005, 5, 865-871
10. Fischer, S. A.; Isborn, C. M.; Prezhdo, O. V. Excited States and Optical Absorption of Small Semiconducting Clusters: Dopants, Defects and Charging Chem. Sci. 2011, 2, 400-406
11. Franceschetti, A.; An, J. M.; Zunger, A. Impact Ionization Can Explain Carrier Multiplication in PbSe Quantum Dots Nano Lett. 2006, 6, 2191-2195
12. Hyeon-Deuk, K.; Prezhdo, O. V. Time-Domain ab initio Study of Auger and Phonon-Assisted Auger Processes in a Semiconductor Quantum Dot Nano Lett. 2011, 11, 1845-1850
13. Hyeon-Deuk, K.; Prezhdo, O. V. Multiple Exciton Generation and Recombination Dynamics in Small Si and CdSe Quantum Dots: An ab initio Time-Domain Study ACS Nano 2012, 6, 1239-1250
14. Isborn, C. M.; Kilina, S. V.; Li, X. S.; Prezhdo, O. V. Generation of Multiple Excitons in PbSe and CdSe Quantum Dots by Direct Photoexcitation: First-Principles Calculations on Small PbSe and CdSe Clusters J. Phys. Chem. C 2008, 112, 18291-18294
15. Ji, M.; Park, S.; Connor, S. T.; Mokari, T.; Cui, Y.; Gaffney, K. J. Efficient Multiple Exciton Generation Observed in Colloidal PbSe Quantum Dots with Temporally and Spectrally Resolved Intraband Excitation Nano Lett. 2009, 9, 1217-1222
16. Klimov, V. I.; Mikhailovsky, A. A.; McBranch, D. W.; Leatherdale, C. A.; Bawendi, M. G. Quantization of Multiparticle Auger Rates in Semiconductor Quantum Dots Science 2000, 287, 1011-1013
17. Kobayashi, Y.; Udagawa, T.; Tamai, N. Carrier Multiplication in CdTe Quantum Dots by Single-Photon Timing Spectroscopy Chem. Lett. 2009, 38, 830-831
18. Luo, J. W.; Franceschetti, A.; Zunger, A. Carrier Multiplication in Semiconductor Nanocrystals: Theoretical Screening of Candidate Materials Based on Band-Structure Effects Nano Lett. 2008, 8, 3174-3181
19. Murphy, J. E.; Beard, M. C.; Norman, A. G.; Ahrenkiel, S. P.; Johnson, J. C.; Yu, P.; Micic, O. I.; Ellingson, R. J.; Nozik, A. J. PbTe Colloidal Nanocrystals: Synthesis, Characterization, and Multiple Exction Generation J. Am. Chem. Soc. 2006, 128, 3241-3247
20. Piryatinski, A.; Velizhanin, K. A. An Exciton Scattering Model for Carrier Multiplication in Semiconductor Nanocrystals: Theory J. Chem. Phys. 2010, 133, 084508-1-084508-19
21. Rabani, E.; Baer, R. Distribution of Multiexciton Generation Rates in CdSe and InAs Nanocrystals Nano Lett. 2008, 8, 4488-4492
22. Rabani, E.; Baer, R. Theory of Multiexciton Generation in Semiconductor Nanocrystals Chem. Phys. Lett. 2010, 496, 227-235
23. Schaller, R. D.; Klimov, V. I. High Efficiency Carrier Multiplication in PbSe Nanocrystals: Implications for Solar Energy Conversion Phys. Rev. Lett. 2004, 92, 186601-1-186601-4
24. Schaller, R. D.; Pietryga, J. M.; Klimov, V. I. Carrier Multiplication in InAs Nanocrystal Quantum Dots with an Onset Defined by the Energy Conservation Limit Nano Lett. 2007, 7, 3469-3476
25. Schaller, R. D.; Agranovich, V. M.; Klimov, V. I. High-Efficiency Carrier Multiplication Through Direct Photogeneration of Multi-Excitons via Virtual Single-Exciton States Nat. Phys. 2005, 1, 189-194
26. Huang, L. B.; Krauss, T. D. Quantized Bimolecular Auger Recombination of Excitons in Single-Walled Carbon Nanotubes Phys. Rev. Lett. 2006, 96, 057407-1-057407-4
27. Hyeon-Deuk, K.; Prezhdo, O. V. Symmetric Band Structures and Asymmetric Ultrafast Electron and Hole Relaxations in Silicon and Germanium Quantum Dots: Time-Domain ab initio Simulation Dalton Trans. 2009, 45, 10069-10077
28. Kobayashi, Y.; Nishimura, T.; Yamaguchi, H.; Tamai, N. Effect of Surface Defects on Auger Recombination in Colloidal CdS Quantum Dots J. Phys. Chem. Lett. 2011, 2, 1051-1055
29. Kobayashi, Y.; Pan, L.; Tamai, N. Effects of Size and Capping Reagents on Biexciton Auger Recombination Dynamics of CdTe Quantum Dots J. Phys. Chem. C 2009, 113, 11783-11789
30. Robel, I.; Gresback, R.; Kortshagen, U.; Schaller, R. D.; Klimov, V. I. Universal Size-Dependent Trend in Auger Recombination in Direct-Gap and Indirect-Gap Semiconductor Nanocrystals Phys. Rev. Lett. 2009, 102, 177404-1-177404-4
31. Beattie, A. R.; Landsberg, P. T. Auger Effect in Semiconductors Proc. R. Soc. London A 1959, 249, 16-29
32. Haug, A. Band-to-Band Auger Recombination in Semiconductors J. Phys. Chem. Sol.. 1988, 49, 599-605
33. 2 Thin Solid Films 2011, 519, 2852-2854
34. 2 Phys. Status Solidi 2008, 5, 1121-1124
35. Kim, D.; Mishima, T.; Tomihira, K.; Nakayama, M. Temperature Dependence of Photoluminescence Dynamics in Colloidal CdS Quantum Dots J. Phys. Chem. C 2008, 112, 10668-10673
36. Kim, D.; Okahara, S.; Nakayama, M. Experimental Verification of Forster Energy Transfer Between Semiconductor Quantum Dots Phys. Rev. B 2008, 78, 153301-1-153301-4
37. Kim, D.; Okazaki, K.; Nakayama, M. Temperature Dependence of the Energy Transfer of Exciton States in Bilayer Structures of CdSe/ZnS Quantum Dots Phys. Rev. B 2009, 80, 045322-1-045322-5
38. Fernee, M. J.; Jensen, P.; Rubinsztein-Dunlop, H. Origin of the Large Homogeneous Line Widths Obtained from Strongly Quantum Confined PbS Nanocrystals at Room Temperature J. Phys. Chem. C 2007, 111, 4984-4989
39. Kamisaka, H.; Kilina, S. V.; Yamashita, K.; Prezhdo, O. V. Ab initio Study of Temperature- and Pressure Dependence of Energy and Phonon-Induced Dephasing of Electronic Excitations in CdSe and PbSe Quantum Dots J. Phys. Chem. C 2008, 112, 7800-7808
40. Olkhovets, A.; Hsu, R.-C.; Lipovskii, A.; Wise, F. W. Size-Dependent Temperature Variation of the Energy Gap in Lead-Salt Quantum Dots Phys. Rev. Lett. 1998, 81, 3539-3542
41. Madrid, A. B.; Hyeon-Deuk, K.; Prezhdo, O. V. Phonon-Induced Dephasing of Excitons in Semiconductor Quantum Dots: Multiple Exciton Generation, Fission, and Luminescence ACS Nano 2009, 3, 2487-2494
42. Pietryga, J. M.; Zhuravlev, K. K.; Whitehead, M.; Klimov, V. I.; Schaller, R. D. Evidence for Barrierless Auger Recombination in PbSe Nanocrystals: A Pressure-Dependent Study of Transient Optical Absorption Phys. Rev. Lett. 2008, 101, 217401-1-217401-4
43. Kharchenko, V.; Rosen, M. Auger Relaxation Processes in Semiconductor Nanocrystals and Quantum Wells J. Lumin. 1996, 70, 158-169
44. Zegrya, G. G.; Samosvat, D. M. Mechanisms of Auger Recombination in Semiconducting Quantum Dots J. Exp. Theor. Phys. 2001, 104, 951-965
45. Kobayashi, Y.; Tamai, N. Size-Dependent Multiexciton Spectroscopy and Moderate Temperature Dependence of Biexciton Auger Recombination in Colloidal CdTe Quantum Dots J. Phys. Chem. C 2010, 114, 17550-17556
46. Nirmal, M.; Dabbousi, B. O.; Bawendi, M. G.; Macklin, J. J.; Trautman, J. K.; Harris, T. D.; Brus, L. E. Fluorescence Intermittency in Single Cadmium Selenide Nanocrystals Nature 1996, 383, 802-804
47. Peterson, J. J.; Krauss, T. D. Fluorescence Spectroscopy of Single Lead Sulfide Quantum Dots Nano Lett. 2006, 6, 510-514
48. Sykora, M.; Mangolini, L.; Schaller, R. D.; Kortshagen, U.; Jurbergs, D.; Klimov, V. I. Size-Dependent Intrinsic Radiative Decay Rates of Silicon Nanocrystals at Large Confinement Energies Phys. Rev. Lett. 2008, 100, 067401-1-067401-4
49. Hyeon-Deuk, K.; Prezhdo, O. V. Photoexcited Electron and Hole Dynamics in Semiconductor Quantum Dots: Phonon-Induced Relaxation, Dephasing, Multiple Exciton Generation and Recombination J. Phys.: Condens. Matter 2012, 24, 363201-1-363201-12
50. Sychugov, I.; Juhasz, R.; Valenta, J.; Linnros, J. Narrow Luminescence Linewidth of a Silicon Quantum Dot Phys. Rev. Lett. 2005, 94, 087405-1-087405-4