Photoinduced surface trapping and the observed carrier multiplication yields in static CdSe nanocrystal samples

ACS Nano

Volumn 5, Issue 5, 2011, Pages 3614-3621

  Califano, Marco ^a  

^a UNIVERSITY OF LEEDS   (United Kingdom)

Author keywords

Auger processes; Carrier multiplication; CdSe nanocrystals; Pseudopotential method; Surface states

Indexed keywords

AUGER PROCESS; CARRIER MULTIPLICATION; CDSE NANOCRYSTALS; PSEUDOPOTENTIAL METHOD; SURFACE STATES;

ABSORPTION SPECTROSCOPY; AUGERS; CADMIUM ALLOYS; CADMIUM COMPOUNDS; CHARGE TRAPPING; EXCITED STATES; NANOCRYSTALS; SEMICONDUCTING LEAD COMPOUNDS;

SURFACES;

CADMIUM DERIVATIVE; CADMIUM SELENIDE; NANOMATERIAL; SELENIUM DERIVATIVE;

ARTICLE; CHEMISTRY; ELECTRON TRANSPORT; LIGHT; MATERIALS TESTING; PARTICLE SIZE; RADIATION EXPOSURE; SURFACE PROPERTY;

CADMIUM COMPOUNDS; ELECTRON TRANSPORT; LIGHT; MATERIALS TESTING; NANOSTRUCTURES; PARTICLE SIZE; SELENIUM COMPOUNDS; SURFACE PROPERTIES;

EID: 80051540427     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn200723g     Document Type: Article

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