SCOPUS 정보 검색 플랫폼

Volumn , Issue 45, 2009, Pages 10069-10077

Symmetric band structures and asymmetric ultrafast electron and hole relaxations in silicon and germanium quantum dots: Time-domain ab initio simulation

(3) Hyeon Deuk, Kim a,b Madrid, Angeline B b Prezhdo, Oleg V b

a KYOTO UNIVERSITY (Japan)

b UNIVERSITY OF WASHINGTON (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AB INITIO CALCULATIONS; AB INITIO SIMULATIONS; AUGER PROCESS; DECAY RATE; ELECTRON-PHONON RELAXATION; FERMI'S GOLDEN RULE; GERMANIUM QUANTUM DOTS; HIGH FREQUENCY HF; HOLE DENSITIES; HOLE RELAXATION; LINEAR RELATIONSHIPS; MOLECULAR DYNAMIC SIMULATIONS; NON-ADIABATIC; PHOTOEXCITATION ENERGY; PHOTOEXCITED ELECTRONS; PRODUCTIVE PROCESS; SEMICONDUCTOR QDS; SI QUANTUM DOT; TIME DOMAIN; TRANSFER ENERGY; ULTRA-FAST; VOLTAGE LOSS;

AUGERS; CADMIUM ALLOYS; CADMIUM COMPOUNDS; COMPUTER SIMULATION; DECAY (ORGANIC); DENSITY FUNCTIONAL THEORY; ELECTRIC CIRCUIT BREAKERS; ELECTRON MOBILITY; ELECTRONS; GERMANIUM; MOLECULAR DYNAMICS; PHONONS; PHOTOEXCITATION; QUANTUM THEORY; SEMICONDUCTING CADMIUM COMPOUNDS; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SOLAR ENERGY; SURFACE RELAXATION; TIME DOMAIN ANALYSIS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 72749086020 PISSN: 14779226 EISSN: 14779234 Source Type: Journal
DOI: 10.1039/b909267f Document Type: Article

Times cited : (51)

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