Improved rear surface passivation of Cu(In,Ga)Se2 solar cells: A combination of an Al2O3 rear surface passivation layer and nanosized local rear point contacts

IEEE Journal of Photovoltaics

Volumn 4, Issue 1, 2014, Pages 486-492

  Vermang, Bart ^a   Fjallström, Viktor ^a   Gao, Xindong ^a   Edoff, Marika ^a  

^a UPPSALA UNIVERSITY   (Sweden)

Author keywords

Al2O3; Atomic layer deposition; Copper indium gallium selenide (CIGS); Cu(InGa)Se2; Ga grading; Nanosized; Passivated emitter; Passivated emitter and rear cell (PERC); Photovoltaics; Point contact openings rear locally diffused cell (PERL); Rear surface passivation; Si; Solar cells; Thin film

Indexed keywords

CONTACT OPENING; GA-GRADING; GALLIUM SELENIDES; NANOSIZED; PASSIVATED EMITTER; PASSIVATED EMITTER AND REAR CELL (PERC); PHOTOVOLTAICS; SURFACE PASSIVATION;

ALUMINUM; ATOMIC LAYER DEPOSITION; CADMIUM SULFIDE; COPPER; DEPOSITION; GALLIUM; GRADING; INDIUM; OPEN CIRCUIT VOLTAGE; PASSIVATION; POINT CONTACTS; SEMICONDUCTING SELENIUM COMPOUNDS; SILICON; SOLAR CELLS; THIN FILMS;

SILICON SOLAR CELLS;

EID: 84891635190     PISSN: 21563381     EISSN: None     Source Type: Journal    
DOI: 10.1109/JPHOTOV.2013.2287769     Document Type: Article

References (33)

1. M. A. Green, "Solar cell efficiency tables (version 41)," Prog. Photovoltaics, Res. Appl., vol. 21, pp. 1-11, 2013.
2. P. Reinhard, A. Chirila, P. Blosch, F. Pianezzi, S. Nishiwaki, S. Buecheler, and A. N. Tiwari, "Review of progress toward 20% efficiency flexible CIGS solar cells and manufacturing issues of solar modules," IEEE J. Photovoltaics, vol. 3, no. 1, pp. 572-580, Jan. 2013.
3. P. Jackson, D. Hariskos, E. Lotter, S. Paetel, R. Wuerz, R. Menner, W. Wischmann, and M. Powalla, "New world record efficiency for Cu(In,Ga)Se2 thin-film solar cells beyond 20%," Prog. Photovoltaics, Res. Appl., vol. 19, pp. 894-897, 2011.
4. S. Niki, M. Contreras, I. Repins,M. Powalla, K. Kushiya, S. Ishizuka, and K. Matsubara, "CIGS absorbers and processes," Prog. Photovolt, Res. Appl., vol. 18, pp. 453-466, 2010.
5. I. Repins, S. Glynn, J. Duenow, T. J. Coutts, W. Metzger, and M.A. Contreras, "Required material properties for high-efficiency CIGS modules," Proc. SPIE, vol. 7409, pp. 1-14, 2009.
6. O. Lundberg, M. Edoff, and L. Stolt, "The effect of Ga-grading in CIGS thin film solar cells," Thin Solid Films, vol. 480-481, pp. 520-525, 2005. (Pubitemid 40643033)
7. M.A. Green, "Crystalline silicon solar cells," in Clean Electricity from Photovoltaics. London, U.K.: Imperial College Press, 2001.
8. Z. Wang, P. Han, H. Lu, H. Qian, L. Chen, Q. Meng, N. Tang, F. Gao, Y. Jiang, J. Wu, W. Wu, H. Zhu, J. Ji, Z. Shi, A. Sugianto, L. Mai, B. Hallam, and S. Wenham, "Advanced PERC and PERL production cells with 20.3% record efficiency for standard commercial p-type silicon wafers," Prog. Photovoltaics, Res. Appl, vol. 20, pp. 260-268, 2012.
9. M. Moors, K. Baert, T. Caremans, F. Duerinckx, A. Cacciato, and J. Szlufcik, "Industrial PERL-type solar cells exceeding 19% with screenprinted contacts and homogeneous emitter," Solar Energy Mater. Solar Cells, vol. 106, pp. 84-88, 2012.
10. A. Cacciato, F. Duerinckx, K. Baert, M. Moors, T. Caremans, G. Leys, M. Mrcarica, E. Picard, A. Ristow, and J. Szlufcik, "Industrial PERL-type Si solar cells with efficiencies exceeding 19.5%," IEEE J. Photovoltaics, vol. 3, no. 2, pp. 628-634, Apr. 2013.
11. J. Zhao, A.Wang, andM.A. Green, "24% efficient PERL structure silicon solar cells," in Proc. 21st IEEE Photovoltaic Spec. Conf., 1990, pp. 333-335. (Pubitemid 21646591)
12. J. A. Giesecke, M. Kasemann, and W. Warta, "Determination of local minority carrier diffusion lengths in crystalline silicon from luminescence images," J. Appl. Phys., vol. 106, pp. 014907-1-014907-8, 2009.
13. B.Vermang, H. Goverde, L. Tous,A. Lorenz, P. Choulat, J. Horzel, J. John, J. Poortmans, and R. Mertens, "Approach for Al2O3 rear surface passivation of industrial p-type Si PERC above 19%," Prog. Photovoltaics, Res. Appl., vol. 20, pp. 269-273, 2012.
14. T. Dullweber, S. Gatz, H. Hannebauer, T. Falcon, R. Hesse, J. Schmidt, and R. Brendel, "Towards 20% efficient large-area screen-printed rearpassivated silicon solar cells," Prog. Photovoltaics, Res. Appl., vol. 20, pp. 630-638, 2012.
15. G. Agostinelli, J. Szlufcik, P. Choulat, and G. Beaucarne, "Local contact structures for industrial PERC-type solar cells," in Proc. 20th Eur. Photovoltaic Sol. Energy Conf., 2005, pp. 942-945.
16. E. Schneiderlöchner, R. Preu, R. Lüdemann, and S.W. Glunz, "Laser-fired rear contacts for crystalline silicon solar cells," Prog. Photovoltaics, Res. Appl., vol. 10, pp. 29-34, 2002. (Pubitemid 34133757)
17. T. Böscke, R. Hellriegel, T.Wütherich, L. Bornschein, A. Helbig, R. Carl, M. Dupke, D. Stichtenoth, T. Aichele, R. Jesswein, T. Roth, C. Schöllhorn, T. Geppert, A. Grohe, J. Lossen, and H.-J. Krokoszinski, "Fully screenprinted PERC cells with laser-fired contacts - An industrial cell concept with 19.5% efficiency," in Proc. 37th Photovoltaic Spec. Conf., 2011, pp. 3663-3666.
18. A. Lorenz, J. John, B. Vermang, E. Cornagliotti, and J. Poortmans, "Comparison of illumination level dependency and rear internal reflectance of PERC-type cells with different dielectric passivation stacks," in Proc. 26th Eur. Photovoltaic Sol. Energy Conf., 2011, pp. 1486-1488.
19. K.O. Davis, K. Jiang, C. Demberger, H. Zunft, H. Haverkamp, D. Habermann, and W. V. Schoenfeld, "Investigation of the internal back reflectance of rear-side dielectric stacks for c-Si solar cells," IEEE J. Photovoltaics, vol. 3, no. 2, pp. 641-648, Apr. 2013.
20. G. Agostinelli, P. Choulat, H. F. W. Dekkers, E. Vermariën, and G. Beaucarne, "Rear surface passivation for industrial solar cells on thin substrates," in Proc. 4th IEEE World Conf. Photovoltaic Energy Conv., 2006, pp. 1004-1007.
21. K. Bothe, G.H. Bauer, and T. Unold, "Spatially resolved photoluminescence measurements on Cu(In,Ga)Se2 thin films," Thin Solid Films, vol. 403-404, pp. 453-456, 2002. (Pubitemid 34100390)
22. W. K. Metzger, I. L.Repins, M. Romero, P.Dippo, M. Contreras, R. Noufi, and D. Levi, "Recombination kinetics and stability in polycrystalline Cu(In,Ga)Se2 solar cells," Thin Solid Films, vol. 517, pp. 2360-2364, 2009.
23. W.-W. Hsu, J. Y. Chen, T.-H. Cheng, S. C. Lu, W.-S. Ho, Y.-Y. Chen, Y.-J. Chien, and C.W. Liu, "Surface passivation of Cu(In,Ga)Se2 using atomic layer deposited Al2O3 ," Appl. Phys. Lett., vol. 100, pp. 023508-1-023508-3, 2012.
24. G. Brown, V. Faifer, A. Pudov, S. Anikeev, E. Bykov, M. Contreras, and J. Wu, "Determination of the minority carrier diffusion length in compositionally graded Cu(In,Ga)Se2 solar cells using electron beam induced current," Appl. Phys. Lett., vol. 96, pp. 022104-1-022104-3, 2010.
25. R. Kniese, M. Powalla, and U. Rau, "Evaluation of electron beam induced current profiles of Cu(In,Ga)Se2 solar cells with different Ga-contents," Thin Solid Films, vol. 517, pp. 2357-2359, 2009.
26. R. Ortega-Borges and D. Lincot, "Mechanism of chemical bath deposition of cadmium sulfide thin films in the ammonia-thiourea system," J. Electrochem. Soc., vol. 140, pp. 3464-3473, 1993.
27. B. Vermang, V. Fjällström, J. Pettersson, P. Salomé, andM. Edoff, "Development of rear surface passivated Cu(In,Ga)Se2 thin film solar cells with nano-sized local rear point contacts," Solar Energy Mater. Solar Cells, vol. 117, pp. 505-511, 2013.
28. B. Vermang, Aluminum Oxide as Negatively Charged Surface Passivation for Industrial Crystalline Silicon Solar Cells. Leuven, Belgium: Univ. Leuven Press, 2012.
29. F. Duerinckx, I. Kuzma-Filipek, K. Van Nieuwenhuysen, G. Beaucarne, and J. Poortmans, "Simulation and implementation of a porous silicon reflector for epitaxial silicon solar cells," Prog. Photovoltaics, Res. Appl., vol. 16, pp. 399-407, 2008.
30. W. N. Shafarman, R. S. Huang, and S.H. Stephens, "Characterization of Cu(InGa)Se2 solar cells using etched absorber layers," in Proc. 4th IEEE 4th World Conf. Photovoltaic Energy Conv., 2006, pp. 420-423.
31. J. Lindahl, U. Zimmermann, P. Szaniawski, T. Törndahl, A. Hultqvist, P. Salomé, C. Platzer-Björkman, and M. Edoff, "Inline Cu(In,Ga)Se2 coevaporation for high-efficiency solar cells and modules," IEEE J. Photovoltaics, vol. 3, no. 3, pp. 1100-1105, Jul. 2013. DOI: 10.1109/ JPHOTOV.2013.2256232.
32. P. Salomé, V. Fjällström, A. Hultqvist, and M. Edoff, "Na doping of CIGS solar cells using low sodium-doped Mo layer," IEEE J. Photovoltaics, vol. 3, no. 1, pp. 509-513, Jan. 2013.
33. D. Bae, S. Kwon, J. Oh,W. K. Kim, and H. Park, "Investigation of Al2O3 diffusion barrier layer fabricated by atomic layer deposition for flexible Cu(In,Ga)Se2 solar cells," Renew. Energ., vol. 55, pp. 62-68, 2013.