Investigation of Al2O3 diffusion barrier layer fabricated by atomic layer deposition for flexible Cu(In,Ga)Se2 solar cells

Renewable Energy

Volumn 55, Issue , 2013, Pages 62-68

  Bae, Dowon ^a   Kwon, Sehan ^a   Oh, Joonjae ^a   Kim, Woo Kyoung ^b   Park, Hyeonwook ^b  

^a LG Innotek Co Ltd   (South Korea)

^b Yeungnam University   (South Korea)

Author keywords

CIGS; Diffusion barrier layer; Flexible; Photovoltaic; Solar cell

Indexed keywords

ALUMINA; ALUMINUM OXIDE; ATOMIC LAYER DEPOSITION; DEFECTS; EFFICIENCY; FABRICATION; II-VI SEMICONDUCTORS; METAL ANALYSIS; METAL IONS; METALS; SECONDARY ION MASS SPECTROMETRY; SOLAR POWER GENERATION; ZINC OXIDE;

ATOMIC-LAYER DEPOSITION; BACK CONTACT; BARRIER LAYERS; CIGS; CONTACT LAYERS; DIFFUSION BARRIER LAYERS; FLEXIBLE; METAL DIFFUSION; PHOTOVOLTAICS; STAINLESS STEEL SUBSTRATES;

SOLAR CELLS;

DIFFUSION; MASS SPECTROMETRY; PHOTOVOLTAIC SYSTEM; QUANTUM MECHANICS; SOLAR POWER; SUBSTRATE;

EID: 84872650755     PISSN: 09601481     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.renene.2012.12.024     Document Type: Article

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