-
1
-
-
84898756988
-
-
release G-2012.06
-
Synopsys. (2012). Synopsys TCAD, release G-2012.06. Available: http://www.synopsys.com
-
(2012)
Synopsys TCAD
-
-
-
2
-
-
84886768505
-
A model for phosphosilicate glass deposition via POCl3 for control of phosphorus dose in si
-
R. Chen, H. Wagner, A. Dastgheib-Shirazi, M. Kessler, Z. Zhu, V. Shutthanandan, P. P. Altermatt and S. T. Dunham, "A model for phosphosilicate glass deposition via POCl3 for control of phosphorus dose in Si", J. Appl. Phys. 112, 124912, 2012.
-
(2012)
J. Appl. Phys.
, vol.112
, pp. 124912
-
-
Chen, R.1
Wagner, H.2
Dastgheib-Shirazi, A.3
Kessler, M.4
Zhu, Z.5
Shutthanandan, V.6
Altermatt, P.P.7
Dunham, S.T.8
-
3
-
-
84861082237
-
Improving the predictive power of modeling the emitter diffusion by fully including the phosphsilicate glass (PSG) layer
-
H. Wagner, A. Dastgheib-Shirazi, R. Chen, S. T. Dunham, M. Kessler and P. P. Altermatt, "Improving the predictive power of modeling the emitter diffusion by fully including the phosphsilicate glass (PSG) layer," 37th IEEE Photovoltaic Specialists Conference (PVSC), 2011, pp. 002957-002962.
-
(2011)
37th IEEE Photovoltaic Specialists Conference (PVSC)
, pp. 002957-002962
-
-
Wagner, H.1
Dastgheib-Shirazi, A.2
Chen, R.3
Dunham, S.T.4
Kessler, M.5
Altermatt, P.P.6
-
4
-
-
78349240260
-
Simulation of phosphorus diffusion and iron gettering with sentaurus process
-
Valencia, Spain
-
J. Schön and W. Warta, "Simulation of phosphorus diffusion and iron gettering with sentaurus process," 23rd European Photovoltaic Solar Energy Conference, Valencia, Spain, 2008, p. 1851.
-
(2008)
23rd European Photovoltaic Solar Energy Conference
, pp. 1851
-
-
Schön, J.1
Warta, W.2
-
5
-
-
84894270787
-
Simulation of the anneal of ion implanted boron emitters and the impact on the saturation current density
-
A. Florakis, T. Janssens, E. Rosseel, B. Douhard, J. Delmotte, E. Cornagliotti, J. Poortmans and W. Vandervorst, "Simulation of the anneal of ion implanted boron emitters and the impact on the saturation current density," Energy Procedia, 27, pp. 240-246, 2012.
-
(2012)
Energy Procedia
, vol.27
, pp. 240-246
-
-
Florakis, A.1
Janssens, T.2
Rosseel, E.3
Douhard, B.4
Delmotte, J.5
Cornagliotti, E.6
Poortmans, J.7
Vandervorst, W.8
-
6
-
-
84874215956
-
Simulation of the post-implantation anneal for emitter profile optimization in high efficiency c-si solar cells
-
A. Florakis, W. Vandervorst, T. Janssens, E. Rosseel, B. Douhard, J. Delmotte, E. Cornagliotti, K Baert, N. Posthum and J. Poortmans, "Simulation of the post-implantation anneal for emitter profile optimization in high efficiency c-Si solar cells," AIP Conf. Proc. 1496, pp. 206-211, 2012.
-
(2012)
AIP Conf. Proc.
, vol.1496
, pp. 206-211
-
-
Florakis, A.1
Vandervorst, W.2
Janssens, T.3
Rosseel, E.4
Douhard, B.5
Delmotte, J.6
Cornagliotti, E.7
Baert, K.8
Posthum, N.9
Poortmans, J.10
-
7
-
-
66149140736
-
Surface passivation schemes for high-efficiency N-type solar cells
-
J. Benick, O. Schultz-Wittmann, J. Schön and S. Glunz, "Surface Passivation Schemes for High-efficiency N-type Solar Cells", Physica Status Solidi RRL 2, 145-147, 2008.
-
(2008)
Physica Status Solidi RRL
, vol.2
, pp. 145-147
-
-
Benick, J.1
Schultz-Wittmann, O.2
Schön, J.3
Glunz, S.4
-
8
-
-
0000725857
-
High concentration diffusivity and clustering of arsenic and phosphorus in silicon
-
S. Solmi and D. Nobili, "High concentration diffusivity and clustering of arsenic and phosphorus in silicon," J. Appl. Phys., Vol. 83, pp. 2484-90, 1998.
-
(1998)
J. Appl. Phys.
, vol.83
, pp. 2484-2490
-
-
Solmi, S.1
Nobili, D.2
-
9
-
-
33645670584
-
High concentration in-diffusion of phosphorus in si from a spray-on source
-
A. Bentzen, A. Holt, J. S. Christensen and B. G. Svensson, "High concentration in-diffusion of phosphorus in Si from a spray-on source", Journal of Applied Physics 99, 064502, 2006.
-
(2006)
Journal of Applied Physics
, vol.99
, pp. 064502
-
-
Bentzen, A.1
Holt, A.2
Christensen, J.S.3
Svensson, B.G.4
-
10
-
-
80052080643
-
Highly efficient all-screen-printed back-contact back-junctionsilicon solar cells with aluminum-alloyed emitter
-
R. Woehl, J. Krause, F. Granek and D. Biro, "Highly efficient all-screen-printed back-contact back-junctionsilicon solar cells with aluminum-alloyed emitter". Energy Procedia 8, pp. 17-22, 2011.
-
(2011)
Energy Procedia
, vol.8
, pp. 17-22
-
-
Woehl, R.1
Krause, J.2
Granek, F.3
Biro, D.4
-
11
-
-
84869417789
-
N-type silicon solar cells with implanted emitter
-
Hamburg, Germany
-
M. Hermle, J. Benick, N. Bateman and S. W. Glunz "N-type silicon solar cells with implanted emitter", 26th European Photovoltaic Solar Energy Conference, Hamburg, Germany, 2011 p. 875.
-
(2011)
26th European Photovoltaic Solar Energy Conference
, pp. 875
-
-
Hermle, M.1
Benick, J.2
Bateman, N.3
Glunz, S.W.4
-
12
-
-
84898768169
-
Evaluation of implantation annealing for highly doped selective boron emitters suitable for screen-printed contacts
-
submitted
-
R. Müller, J. Benick, N. Bateman, J. Schön, C. Reichel, A. Richter, M. Hermle, S. Glunz "Evaluation of Implantation Annealing for Highly Doped Selective Boron Emitters Suitable for Screen-printed Contacts", Solmat, 2013, submitted.
-
(2013)
Solmat
-
-
Müller, R.1
Benick, J.2
Bateman, N.3
Schön, J.4
Reichel, C.5
Richter, A.6
Hermle, M.7
Glunz, S.8
|