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Volumn 2, Issue 4, 2008, Pages 145-147

Surface passivation schemes for high-efficiency n-type Si solar cells

Author keywords

[No Author keywords available]

Indexed keywords

EMITTER SATURATION CURRENT DENSITY; HIGH EFFICIENCY; N TYPE SILICON; P-TYPE; P-TYPE SILICON; PHOSPHORUS DIFFUSION; SI SOLAR CELLS; STANDARD TECHNOLOGY; SURFACE PASSIVATION; SURFACE RECOMBINATION VELOCITIES;

EID: 66149140736     PISSN: 18626254     EISSN: 18626270     Source Type: Journal    
DOI: 10.1002/pssr.200802124     Document Type: Article
Times cited : (14)

References (16)
  • 12
    • 70449656206 scopus 로고    scopus 로고
    • Synopsys Zurich, Switzerland, Release: Z-2007.03, Sentaurus TCAD
    • Synopsys Zurich, Switzerland, Release: Z-2007.03, www.synopsys.com, Sentaurus TCAD (2007).
    • (2007)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.