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Volumn 2, Issue 4, 2008, Pages 145-147
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Surface passivation schemes for high-efficiency n-type Si solar cells
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Author keywords
[No Author keywords available]
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Indexed keywords
EMITTER SATURATION CURRENT DENSITY;
HIGH EFFICIENCY;
N TYPE SILICON;
P-TYPE;
P-TYPE SILICON;
PHOSPHORUS DIFFUSION;
SI SOLAR CELLS;
STANDARD TECHNOLOGY;
SURFACE PASSIVATION;
SURFACE RECOMBINATION VELOCITIES;
BORON;
CONVERSION EFFICIENCY;
OPEN CIRCUIT VOLTAGE;
PHOSPHORUS;
SILICON COMPOUNDS;
SILICON OXIDES;
SILICON SOLAR CELLS;
SOLAR CELLS;
PASSIVATION;
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EID: 66149140736
PISSN: 18626254
EISSN: 18626270
Source Type: Journal
DOI: 10.1002/pssr.200802124 Document Type: Article |
Times cited : (14)
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References (16)
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