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Volumn 1496, Issue , 2012, Pages 206-211
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Simulation of the post-implantation anneal for emitter profile optimization in high efficiency c-Si solar cells
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Author keywords
Boron; Emitter formation; IBC cells; Ion Implantation; PERL cells; Solar Cells; TCAD
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Indexed keywords
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EID: 84874215956
PISSN: 0094243X
EISSN: 15517616
Source Type: Conference Proceeding
DOI: 10.1063/1.4766525 Document Type: Conference Paper |
Times cited : (3)
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References (21)
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