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Volumn 1496, Issue , 2012, Pages 206-211

Simulation of the post-implantation anneal for emitter profile optimization in high efficiency c-Si solar cells

Author keywords

Boron; Emitter formation; IBC cells; Ion Implantation; PERL cells; Solar Cells; TCAD

Indexed keywords


EID: 84874215956     PISSN: 0094243X     EISSN: 15517616     Source Type: Conference Proceeding    
DOI: 10.1063/1.4766525     Document Type: Conference Paper
Times cited : (3)

References (21)
  • 5
    • 84874219368 scopus 로고    scopus 로고
    • High Throughput P + Implantation for Silicon Emitters
    • Leuven
    • H. Hieslmair, B. Adibi, M. Chun, "High Throughput P + Implantation for Silicon Emitters", in Si PV 12, Leuven
    • Si PV 12
    • Hieslmair, H.1    Adibi, B.2    Chun, M.3
  • 6
    • 84874216191 scopus 로고    scopus 로고
    • http://www.vsea.com/products.nsf/docs/solion
  • 7
    • 84874196529 scopus 로고    scopus 로고
    • Simulation of the anneal of ion implanted boron emitters and the impact on the saturation current density
    • to be published in
    • A. Florakis, T. Janssens, E. Rosseel et al., "Simulation of the anneal of ion implanted boron emitters and the impact on the saturation current density", to be published in Energy Procedia
    • Energy Procedia
    • Florakis, A.1    Janssens, T.2    Rosseel, E.3
  • 13
    • 84874209696 scopus 로고    scopus 로고
    • Recombination mechanisms in Silicon
    • Sydney, Centre of Photovoltaic Engineering, UNSW
    • A.G. Aberle, "Recombination mechanisms in Silicon" in "Crystalline Silicon Solar Cells", Sydney, Centre of Photovoltaic Engineering, UNSW, 1999 pp. 18-23
    • (1999) Crystalline Silicon Solar Cells , pp. 18-23
    • Aberle, A.G.1
  • 14


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.